Electrochemical deposition of iron sulfide thin films and heterojunction diodes with zinc oxide

Kawai, S.; Yamazaki, Ryuta; Sobue, Susumu; Okuno, Eiichi; Ichimura, M.

doi:10.1063/1.4869035

Cited by 30 publications

(21 citation statements)

References 18 publications

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“…The spectra in Fig. 5 are not significantly different from that observed for iron sulfide deposited by the same technique, which has much reduced oxygen content [20], and therefore we are unable to confirm any widening of the band gap due to the substitution of sulfur with oxygen. Fig.…”

Section: Resultsmentioning

confidence: 66%

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Electrochemical deposition of Fe–S–O thin films

2014

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Section: Resultsmentioning

confidence: 66%

“…Further, the fabrication of heterostructure devices based on FeS x O y has never been attempted. Recently, Kawai et al reported ECD of iron sulfide thin films and fabrication of pn heterojunction diodes based on ECD-iron sulfide [20]. In this work, we deposited FeS x O y thin films by ECD.…”

Section: Introductionmentioning

confidence: 92%

Electrochemical deposition of Fe–S–O thin films

2014

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“…Dong et al [10] studied the effect of sulfurization temperature on the structure of Ferrous sulfide (FeS) thin films deposited on indium-tin oxide (ITO) substrates by electrochemical deposition, whilst Wang et al [11] studied the effect of sulfurization time on the structure of electrodeposited iron sulfide thin films. Finally, Kawai et al [12] studied the optimal conditions for the electrodeposition of iron sulfide thin films. Each of these authors used their own unique electrochemical factors such as pH, electrolyte concentration, deposition potential, and temperature and deposition time.…”

Section: Introductionmentioning

confidence: 99%

Growth of a Pure and Single Phase Iron Sulfide (Pyrite) Thin Film by Electrochemical Deposition for Photovoltaic Applications

Botchway¹,

Ampong²,

Nkrumah³

et al. 2019

OJAppS

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Single phase iron pyrite (FeS 2) films have been successfully deposited on ITO-coated glass substrates using a 3-electrode electrochemical system with graphite as the counter electrode and Ag/AgCl as the reference electrode. In this single-step electrodeposition, the FeS precursor thin film was directly electrodeposited on the conductive substrate from the electrolytic bath solution which contained FeSO 4 •7H 2 O as an iron source, and Na 2 S 2 O 3 •5H 2 O as a sulfur source. The deposition was carried out potentiostatically at a constant potential of −0.9 V vs. Ag/AgCl at room temperature. The growth of the iron pyrite phase was achieved by annealing the as-deposited at 500˚C for an hour in an ambient of sulfur to form the pyrite phase. For sulfurization, two different techniques, one using the Kipp's apparatus and a second, which involved heating elemental sulfur at 200˚C, were used for the production of the sulfur gas. X-ray diffraction analyses of the sulfurized films showed that both sulfurization techniques appeared to form the pyrite phase, however, the second method yielded films with maximum crystalline order and stoichiometry with no discernable impurity peaks. Optical absorption measurements revealed the existence of a direct transition with an estimated band gap of 1.75 eV. SEM micrograph showed a compact morphology with a rough surface made up of crystallites of irregular shapes and sizes with well-defined edges, covering the entire substrate. EDAX analysis of the film was consistent with the formation of FeS 2 pyrite thin films.

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“…В большинстве случаев при исследовании электрических свойств наблюдают p-тип проводимости пирита. С использованием пленок p-FeS 2 изготавливают выпрямляющие ток гетероструктуры ZnO/p-FeS 2 [6] и создают омические контакты к p-CdTe в структурах n-CdS/p-CdTe/p-FeS 2 /Au [7]. При участии хлора в процес-сах выращивания пленок, который компенсирует дыроч-ный тип проводимости, получают n-FeS 2 [8].…”

Section: Introductionunclassified

Электрические свойства и энергетические параметры гетеропереходов n-FeS-=SUB=-2-=/SUB=-/p-Cd-=SUB=-1-x-=/SUB=-Zn-=SUB=-x-=/SUB=-Te

Orletskii¹,

Ілащук²,

Солован³

et al. 2018

Физика И Техника Полупроводников

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The conditions for fabricating n -FeS_2/ p -Cd_1 –_ x Zn_ x Te heterojunctions by the spray pyrolysis of thin pyrite films on p -Cd_1 –_ x Zn_ x Te crystalline substrates are investigated. A comprehensive analysis of the current–voltage ( I – V ) and capacitance–voltage ( C – V ) characteristics makes it possible to establish the limitation of the reverse current by the space-charge region at small reverse biases and consider the mechanisms of current formation with the participation of energy levels near the heterojunction. A model of the energy profile of the n -FeS_2/ p -Cd_1 –_ x Zn_ x Te heterojunction is proposed, which turns out to be in good correspondence with the experimentally determined parameters and the dynamics of their change with a variation in temperature.

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Electrochemical deposition of iron sulfide thin films and heterojunction diodes with zinc oxide

Abstract: Structure and optoelectronic properties of spray deposited Mg doped p -CuCrO 2 semiconductor oxide thin films J. Appl. Phys.

Cited by 30 publications

References 18 publications

Electrochemical deposition of Fe–S–O thin films

Electrochemical deposition of Fe–S–O thin films

Growth of a Pure and Single Phase Iron Sulfide (Pyrite) Thin Film by Electrochemical Deposition for Photovoltaic Applications

Электрические свойства и энергетические параметры гетеропереходов n-FeS-=SUB=-2-=/SUB=-/p-Cd-=SUB=-1-x-=/SUB=-Zn-=SUB=-x-=/SUB=-Te

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