Electrochemical deposition of metals onto silicon

Oskam, Gerko; Long, John G.; Natarajan, A.; Searson, Peter C.

doi:10.1088/0022-3727/31/16/001

Cited by 392 publications

(379 citation statements)

References 97 publications

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“…9Ϫ51 In this class of reactions, sufficiently oxidizing metal ions, with a redox potential more positive than that of substrate, are reduced by electrons derived from the bonding electrons of the substrate lattice valence band; the reaction is accompanied by substrate dissolution and occurs in the absence of an external source of electric current or chemical reducing agents. 42 The result is metallic nanoparticles and films interfaced directly with the substrate surface. 13,42 Because the reaction is carried out at room temperature with the simplest of chemical apparatus (water, metal ion, substrate in a beaker), it is straightforward to carry out and is less expensive and faster than commonly used metal evaporation 52,53 and sputtering techniques.…”

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confidence: 99%

“…42 The result is metallic nanoparticles and films interfaced directly with the substrate surface. 13,42 Because the reaction is carried out at room temperature with the simplest of chemical apparatus (water, metal ion, substrate in a beaker), it is straightforward to carry out and is less expensive and faster than commonly used metal evaporation 52,53 and sputtering techniques. 5,54 Galvanic displacement has seen application in a number of different areas, particularly those related to the construction of nanoscale metallic and semiconductor architectures.…”

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Heteroepitaxial Growth of Gold Nanostructures on Silicon by Galvanic Displacement

et al. 2009

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This work focuses on the synthesis and interfacial characterization of gold nanostructures on silicon surfaces, including Si(111), Si(100), and Si nanowires. The synthetic approach uses galvanic displacement, a type of electroless deposition that takes place in an efficient manner under aqueous, room-temperature conditions. The case of gold-on-silicon has been widely studied and used for several applications and yet, a number of important, fundamental questions remain as to the nature of the interface. Some studies are suggestive of heteroepitaxial growth of gold on the silicon surface, whereas others point to the existence of a silicon؊gold intermetallic sandwiched between the metallic gold and the underlying silicon substrate. Through detailed high resolution transmission electron microscopy (TEM), combined with selected area electron diffraction (SAED) and nanobeam diffraction (NBD), heteroepitaxial gold that is grown by galvanic displacement is confirmed on both Si(100) and Si(111), as well as silicon nanowires. The coincident site lattice (CSL) of gold-on-silicon results in a very small 0.2% lattice mismatch due to the coincidence of four gold lattices to three of silicon. The presence of gold؊silicon intermetallics is suggested by the appearance of additional spots in the electron diffraction data. The gold؊silicon interfaces appear heterogeneous with distinct areas of heteroepitaxial gold on silicon, and others, less well-defined, where intermetallics may reside. The high resolution cross-sectional TEM images reveal a roughened silicon interface under these aqueous galvanic displacement conditions, which most likely promotes nucleation of metallic gold islands that merge over time: a Volmer؊Weber growth mechanism in the initial stages.

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Heteroepitaxial Growth of Gold Nanostructures on Silicon by Galvanic Displacement

et al. 2009

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“…Although electroplating is typically carried out on a metal seed layer, deposition on silicon is not new and it has been reported a few times for different metals and metal alloys [2,3]. In the following sections, a new procedure to electroplate nickel directly onto highly doped silicon wafers will be presented.…”

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Seedless electroplating on patterned silicon

Llona¹,

Jansen²,

Elwenspoek³

2006

J. Micromech. Microeng.

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Nickel thin films have been electrodeposited without the use of an additional seed layer, on highly doped silicon wafers. These substrates conduct sufficiently well to allow deposition using a peripherical electrical contact on the wafer. Films 2 µm thick have been deposited using a nickel sulfamate bath on both n+-and p+-type silicon wafers, where a series of trenches with different widths had been previously etched by plasma etching. A new, reliable and simple procedure based on the removal of the native oxide layer is presented which allows uniform plating of patterned substrates.

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“…By using a nano beam probe, TEM images and electron diffraction patterns were acquired from the interface area, allowing us to measure relative orientation of Si and Au lattices. While straightforward to carry out, the underlying mechanism of galvanic deposition is complicated and thus the reason for the selectivity is not yet known at this time [2]; nevertheless, the preferential growth may be dictated by the interfacial interaction of the Au/Si epilayers. More control experiments and theoretical calculations are under way to further investigate this issue [6].…”

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TEM Studies of Au/Si Epilayer Interfaces

et al. 2009

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There is much interest in fabricating metallic contacts on semiconductor surfaces by a straightforward class of electrochemical reactions called galvanic displacement [1,2]. The chemistry is carried out via contact of the desired semiconductor with the metal ion solution (generally aqueous); the semiconductor acts as the source of electrons, reducing the metal ions in situ to metal. In the case of gold deposition on silicon, we have evidence that the growth of Au nanoparticles on silicon is epitaxial [3]. In order to better understand the nature of these interfaces, we carried out a series of plan-view and cross-section transmission electron microscopy (TEM) studies. TEM samples were prepared by mechanical grinding followed with ion milling at cryogenic temperatures (below -100°C). TEM images and diffraction patterns were recorded using a 200kV JEOL 2200FS TEM/STEM instrument. In order to complement the work described above on flat silicon, we have also investigated Au nanoparticles deposited on Si nanowires. Au particles have a strong tendency to grow on certain facets, such as (110) for particles on a <112> nanowire; this is demonstrated in Fig. 4. By using a nano beam probe, TEM images and electron diffraction patterns were acquired from the interface area, allowing us to measure relative orientation of Si and Au lattices. While straightforward to carry out, the underlying mechanism of galvanic deposition is complicated and thus the reason for the selectivity is not yet known at this time [2]; nevertheless, the preferential growth may be dictated by the interfacial interaction of the Au/Si epilayers. More control experiments and theoretical calculations are under way to further investigate this issue [6].

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Electrochemical deposition of metals onto silicon

Cited by 392 publications

References 97 publications

Heteroepitaxial Growth of Gold Nanostructures on Silicon by Galvanic Displacement

Heteroepitaxial Growth of Gold Nanostructures on Silicon by Galvanic Displacement

Seedless electroplating on patterned silicon

TEM Studies of Au/Si Epilayer Interfaces

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