Electrochemical deposition of Ni and Cu onto monocrystalline n-Si(100) wafers and into nanopores in Si/SiO2 template

Ivanova, Yu. A.; Ivanou, Dzmitry; Федотов, А. К.; Streltsov, Е.А.; Demyanov, S. E.; Петров, А. В.; Kaniukov, Egor; Fink, D.

doi:10.1007/s10853-007-1926-x

Cited by 45 publications

(24 citation statements)

References 18 publications

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“…The regimes of mesoporous SiO 2 layer production by the NITEM technology were described in [6]. These nanopores having the diameters 100-250 nm and heights about 400-500 nm were filled with Ni to form a system of nanorods-in-pores (NRIPs) randomly distributed within the SiO 2 layer.…”

Section: Methodsmentioning

confidence: 99%

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Magnetoresistance in n-Si/SiO₂/Ni Nanostructures Manufactured by Swift Heavy Ion-Induced Modification Technology

et al. 2011

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Section: Methodsmentioning

confidence: 99%

“…A thickness of the films with the granules measuring approximately 10-70 nm was close to the height of Ni-NRIPs in n-Si/ SiO 2 /Ni nanostructures (≈ 500 nm). The procedures of Ni electrodeposition into the pores together with their SEM images were presented in our previous paper [6].…”

Section: Methodsmentioning

confidence: 99%

Magnetoresistance in n-Si/SiO₂/Ni Nanostructures Manufactured by Swift Heavy Ion-Induced Modification Technology

et al. 2011

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“…The procedure and regimes of a mesoporous SiO 2 layer fabrication by the ITEM technology were described in detail earlier [6]. These nanopores having the diameters 100250 nm and heights about 400500 nm were lled with Ni to form NRIPs contacting with Si substrate.…”

Section: Methodsmentioning

confidence: 99%

Anisotropic Magnetoresistance of Ni Nanorod Arrays in Porous SiO₂/Si Templates Manufactured by Swift Heavy Ion-Induced Modification

et al. 2015

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In this work anisotropic magnetoresistance in nanogranular Ni lms and Ni nanorods on Si(100) wafer substrates was studied in wide ranges of temperature and magnetic eld. To produce Ni lms and nanorods we used electrochemical deposition of Ni clusters either directly on the Si substrate or into pores in SiO2 layer on the Si substrate. To produce mesopores in SiO2 layer, SiO2/Si template was irradiated by a scanned beam of swift heavy 350 MeV 197 Au 26+ ions with a uence of 5 × 10 8 cm −2 and then chemically etched in diluted hydrouoric acid. Pores, randomly distributed in the template have diameters of 100250 nm and heights about 400500 nm. Comparison of temperature dependences of resistance and magnetoresistance in Ni lms and n-Si/SiO2/Ni structures with Ni nanorods showed that they are strongly dependent on orientation of magnetic eld and current vectors relative to each other and the plane of Si substrate. Moreover, magnetoresistance values in n-Si/SiO2/Ni nanostructures can be controlled not only by electric eld applied along Si substrate but also by additionally applied transversal bias voltage.

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“…Investigation of such structures creates preconditions for modeling of electron devices with the Schottky barrier possessing non-linear voltampere characteristics including the negative differential impedance. Realization of the formulated idea would allow developing magnetic field sensors with enhanced sensitivity [14].…”

Section: Figmentioning

confidence: 99%

Application of Focused Charge-Particle Beams of in Manufacturing of Nanocomponents

et al. 2010

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Application of focused beams of medium energy light ions, electrons and low energy heavy ions is considered for the technology of manufacturing of small-dimension components. Physical principles applied as the basis for interaction of the above beams with resistive materials are described. The proton beam lithography is considered as a new technology possessing high potential capabilities for various applications like micro-optics and nanoelectronics of terahertz wave band.

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Electrochemical deposition of Ni and Cu onto monocrystalline n-Si(100) wafers and into nanopores in Si/SiO2 template

Cited by 45 publications

References 18 publications

Magnetoresistance in n-Si/SiO₂/Ni Nanostructures Manufactured by Swift Heavy Ion-Induced Modification Technology

Magnetoresistance in n-Si/SiO₂/Ni Nanostructures Manufactured by Swift Heavy Ion-Induced Modification Technology

Anisotropic Magnetoresistance of Ni Nanorod Arrays in Porous SiO₂/Si Templates Manufactured by Swift Heavy Ion-Induced Modification

Application of Focused Charge-Particle Beams of in Manufacturing of Nanocomponents

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Electrochemical deposition of Ni and Cu onto monocrystalline n-Si(100) wafers and into nanopores in Si/SiO2 template

Cited by 45 publications

References 18 publications

Magnetoresistance in n-Si/SiO2/Ni Nanostructures Manufactured by Swift Heavy Ion-Induced Modification Technology

Magnetoresistance in n-Si/SiO2/Ni Nanostructures Manufactured by Swift Heavy Ion-Induced Modification Technology

Anisotropic Magnetoresistance of Ni Nanorod Arrays in Porous SiO2/Si Templates Manufactured by Swift Heavy Ion-Induced Modification

Application of Focused Charge-Particle Beams of in Manufacturing of Nanocomponents

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About

Magnetoresistance in n-Si/SiO₂/Ni Nanostructures Manufactured by Swift Heavy Ion-Induced Modification Technology

Magnetoresistance in n-Si/SiO₂/Ni Nanostructures Manufactured by Swift Heavy Ion-Induced Modification Technology

Anisotropic Magnetoresistance of Ni Nanorod Arrays in Porous SiO₂/Si Templates Manufactured by Swift Heavy Ion-Induced Modification