Electrochemical deposition of SnS thin films

Ichimura, M.; Takeuchi, Kenta; Ono, Yuhei; Arai, Eisuke

doi:10.1016/s0040-6090(99)00798-1

Cited by 157 publications

(102 citation statements)

References 8 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…Increasing the heating temperature also increased the sulfur content in the film, reactions performed at 250 and 300°C produced SnS films with reduced sulfur deficiency (Sn/S ratios of 1.15:1 (Sn 1.15 S) and 1.11:1 (Sn 1.11 S), respectively), and a stoichiometric SnS film was obtained upon heating at 400°C (Sn/S ratio 1.03:1; (Sn 1.03 S)). Such control of the stoichiometry in SnS nanomaterials has previously been observed [32,33].…”

Section: Resultsmentioning

confidence: 54%

A facile method for the production of SnS thin films from melt reactions

et al. 2016

View full text Add to dashboard Cite

Tin(II)O-ethylxanthate [Sn(S 2 COEt) 2 ] was prepared and used as a single-source precursor for the deposition of SnS thin films by a melt method. Polycrystalline, (111)-orientated, orthorhombic SnS films with controllable elemental stoichiometries (of between Sn 1.3 S and SnS) were reliably produced by selecting heating temperatures between 200 and 400°C. The direct optical band gaps of the SnS films ranged from 1.26 to 1.88 eV and were strongly influenced by its Sn/S ratio. The precursor [Sn(S 2 COEt) 2 ] was characterized by thermogravimetric analysis and attenuated total reflection Fourier-transform infrared spectroscopy. The as-prepared SnS films were characterized by scanning electron microscopy, energy-dispersive X-ray spectroscopy, powder X-ray diffractometry, Raman spectroscopy, and UV-Vis spectroscopy.

show abstract

Section: Resultsmentioning

confidence: 54%

A facile method for the production of SnS thin films from melt reactions

et al. 2016

View full text Add to dashboard Cite

show abstract

“…[2,5] Chlorine contamination was also reported in SnS films grown by CVD using tin chloride. [6,24] ALD SnS was reported by Kim et al using the reaction of tin 2,4-pentanedionate (Sn(acac) 2 ) and hydrogen sulfide (H 2 S).…”

Section: Introductionmentioning

confidence: 99%

“…[1] In addition, SnS has proper optical properties for PV application; it has an indirect optical band gap of 1.0-1.1 eV and a high absorption coefficient (greater than 10 4 cm -1 ) above the direct absorption edge at 1.3-1.5 eV. [2][3][4][5][6] SnS crystallizes in an orthorhombic unit cell, with lattice parameters of a = 4.334 Å, b = 11.200 Å, and c = 3.987 Å, [7] which can be viewed as a distorted rocksalt (NaCl) structure. It is composed of double SnS layers perpendicular to the b axis with tin and sulfur atoms covalently bonded within the layers and weak van der Waals bonds between the layers.…”

Section: Introductionmentioning

confidence: 99%

“…The first method involves solution-based techniques such as chemical bath deposition (CBD), [9,11] successive ionic layer adsorption and reaction (SILAR), [12,13] and electrochemical deposition (ECD). [2,5,14,15] A second technique is physical vapor deposition from a SnS target such as thermal evaporation, [16][17][18] RF sputtering, [19] and electron beam evaporation. [20] The last method uses transport by chemical vapors such as chemical spray pyrolysis, [21][22][23] chemical vapor deposition (CVD), [6,[24][25][26][27] and atomic layer deposition (ALD).…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Atomic Layer Deposition of Tin Monosulfide Thin Films

Sinsermsuksakul

Heo

Noh

et al. 2011

Advanced Energy Materials

412

355

View full text Add to dashboard Cite

show abstract

“…The films have mainly been deposited by molecular beam epitaxy [9], chemical bath deposition [10], spray pyrolysis [11], rf sputtering [12], and evaporation [13]. As a wet-based novel approach, electrodeposition [14][15][16] has been suggested due to its simple and low cost deposition. Electrodeposition can be easily controlled by adjusting several experimental parameters such as the bath temperature, applied potential or current, and bath pH.…”

Section: Introductionmentioning

confidence: 99%

Single phase tin sulfide films prepared by one-bath electrodeposition

Cha

Kwon

Cho

2015

J Mater Sci: Mater Electron

View full text Add to dashboard Cite

Single phase SnS films were potentiostatically electrodeposited on ITO-coated glass substrates in an aqueous solution containing 10 mM SnSO 4 and 50 mM Na 2 S 2 O 3 at a pH of 2.7 while varying the deposition potential, bath temperature, and stirring. Contrary to room temperature deposition, agitation using a magnetic stirrer in the electrodeposition process at 45°C significantly promoted the deposition rate and enlarged the crystal size of the SnS compounds. The structural, morphological, and optical properties of the SnS films, which had nearly stoichiometric compositions, were characterized. All of the synthesized SnS films were determined to be p-type semiconductor material by photoelectrochemical testing under illumination. The thicker samples obtained with stirring exhibited an optical band gap of *1.02 eV, which is almost identical to the theoretical value. The p-n junction heterostructures of the ITO/SnS/ZnO/In were fabricated and their rectifying behaviors were characterized under dark condition.

show abstract

Electrochemical deposition of SnS thin films

Cited by 157 publications

References 8 publications

A facile method for the production of SnS thin films from melt reactions

A facile method for the production of SnS thin films from melt reactions

Atomic Layer Deposition of Tin Monosulfide Thin Films

Single phase tin sulfide films prepared by one-bath electrodeposition

Contact Info

Product

Resources

About