Electrochemical Deposition Process for ULSI Interconnection Devices

Osaka, Tetsuya; Yoshino, Masahiro

doi:10.1002/9780470602638.ch13

Cited by 4 publications

(2 citation statements)

References 77 publications

(118 reference statements)

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“…Electrodeposition is a powerful bottom-up approach for wire-like metallic micro- and nanomaterial synthesis, especially for very large-scale integration and ultra-large-scale integration interconnection line fabrication . It is known that both the highly oriented pyrolytic graphite electrode and metal electrodes can be used to electrodeposit metallic nanowires.…”

Section: Introductionmentioning

confidence: 99%

Two-Stage Tunneling-Dominated Electrodeposition for Large-Scale Production of Ultralong Wavy Metal Microstructures on Native Oxide Layer-Passivated Si Electrode with Specific Surface Configuration

Ren

Jiang

et al. 2019

J. Phys. Chem. C

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Wavy-shaped metallic materials play a significant role in various applications. The current synthesis strategy for such materials is limited to top-down thin metal film etching. Note that top-down etching is inevitable to process more surface dangling bonds than their bottom-up analogues and results in poor chemical stability. However, up to now, no bottom-up method has been presented to produce wavy-shaped metallic materials. Here, taking Cu as a model material, a bottom-up two-stage tunneling-dominated electrodeposition strategy is reported to produce ultralong Cu wavy microstructures (WMSs) on a lithographically patterned and native oxide layer-passivated Si electrode, where direct electron transfer is impeded. Scanning electron microscopy and field-emission scanning electron microscopy results demonstrate the large-scale production of Cu WMSs consisting of interconnected octahedral and cuboctahedral nanoparticles. The I–V curve suggests good electrical performance of the as-deposited Cu WMSs. Together with the inherent properties of the Cu material, for example, high thermal conductivity, high product selectivity for CO2 reduction reaction, and good biocompatibility, the distinctive structural characteristics of Cu WMSs ensure that they could be widely used in electronics, catalysis, and biotechnology. Moreover, it is reasonably expected that such a method can be efficacious for various metals including (but not limited to) silver, gold, and platinum.

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Section: Introductionmentioning

confidence: 99%

Two-Stage Tunneling-Dominated Electrodeposition for Large-Scale Production of Ultralong Wavy Metal Microstructures on Native Oxide Layer-Passivated Si Electrode with Specific Surface Configuration

Ren

Jiang

et al. 2019

J. Phys. Chem. C

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“…When fabricating multilevel interconnection structures in semiconductor processes, an insulating film is deposited on the lower aluminum wiring, and contact vias are formed to connect the lower and upper wiring. A seed layer is then deposited on the entire substrate, and the damascene process is employed to form contact areas by copper electroplating and chemical mechanical polishing (CMP) . To improve the performance of functional elements in MEMS devices, metal materials other than aluminum are often used for elements and interconnections from the viewpoint of low resistance, heat resistance, and catalytic functions.…”

Section: Introductionmentioning

confidence: 99%

Method for Fabricating Multilevel Interconnection Structures Using Differential Delamination Energies between Metal and Silicon Oxide Thin Films

Aono

Iwasaki

Yoshimura

et al. 2016

Elect Comm in Japan

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SUMMARYA method for fabricating multilevel interconnection structures using differential delamination energies (adhesion strength) between metal and silicon oxide thin films has been developed. When the selectivity of the delamination energies between the metal and the silicon oxide thin films sets on the wiring, the silicon oxide thin film can be released on the low delamination energy area and can be held on the high delamination energy area by using ultrasonic waves. The delamination energies are calculated by using a molecular dynamics simulation. The delamination energies between chromium, titanium, and nickel and silicon oxide thin films are larger than those of copper and gold thin films. Chromium, titanium, and nickel are applied as an adhesion layer with silicon oxide, and copper and gold are applied as a release layer from silicon oxide. The results are applied to the process for fabricating the multilevel interconnection structures, and the release and adhesive areas of silicon oxide thin film can be fabricated on the wiring by applying ultrasonic waves. With this method, the lower wiring and the contact areas of multilevel interconnection structures can be easily fabricated. C⃝

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