We present a detailed investigation of the nucleation
sites, growth,
and morphology of large-area graphene samples synthesized via chemical
vapor deposition (CVD) on bulk palladium substrates. The CVD chamber
was systematically controlled over a large range of growth temperatures
and durations, and the nature of graphene growth under these conditions
was thoroughly investigated using a combination of scanning electron
microscopy and a statistical analysis of >500 Raman spectra. Graphene
growth was found to initiate at ∼825 °C, above which the
growth rate increased rapidly. At T = 1000 °C,
defect-free high-quality graphene was found to grow at an unprecedented
rate of tens of micrometers per second, orders of magnitude faster
than past reports on Cu- or Ni-based growth, thus leading to macroscopic
coverage of the substrate within seconds of growth initiation. By
arresting the growth at lower temperatures, we found that graphene
nanoislands preferred to nucleate at very specific positions close
to terrace edges and step inner edges. Evidence of both epitaxial
and self-limiting growth was found. Along with monolayer graphene,
both Bernal and turbostratic multilayer graphene could be obtained.
A detailed evolution of the different types of graphene, as a function
of both growth temperature and duration, has been presented. From
these, optimal growth conditions for any chosen type of graphene sample
can be inferred.