Electrochemical growth and characterization of size-quantized CdTe thin films grown by underpotential deposition

Şişman, İlkay; Demir, Ümit

doi:10.1016/j.jelechem.2010.12.005

Cited by 40 publications

(7 citation statements)

References 36 publications

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“…The optical band gap energy was found to be 1.51 eV for the as grown nanocrystalline CdTe thin film having thickness 200 nm on the glass substrate. This value of band gap was in good agreement with the earlier reported value of band gap for electrosynthesized CdTe thin films for 50 minute [6].…”

Section: Optical Propertiessupporting

confidence: 92%

“…CdTe thin films have been deposited by a variety of techniques such as chemical bath deposition [5], electrodeposition [6], spray [7], vacuum evaporation [8], sputtering [9], pulsed laser deposition [10], magnetron sputtering [11], closed space sublimation [12], physical vapor deposition [13], thermal evaporation [14,15] and screen printing [16] etc. Among all the available deposition techniques, successive ionic layer adsorption and reaction (SILAR) is an attractive technique that has widely employed for thin film deposition, which is based on the immersion of the substrate into separately place cationic and anionic precursors and rinsing between every immersion with ion exchange water to avoid homogeneous precipitation [17].…”

Section: Introductionmentioning

confidence: 99%

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Structural and Optoelectronic Properties of Nanocrystalline CdTe Thin Films Synthesized by Using SILAR Technique

Samanta¹,

Salunke²,

Gosavi³

et al. 2017

J. Nano- Electron. Phys.

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Nanocrystalline CdTe thin films were deposited on amorphous glass substrate using successive ionic layer adsorption and reaction (SILAR) technique. The films are characterized using XRD, FESEM, optical absorption techniques and electrical resistivity measurement. The XRD pattern revealed that nanocrystalline CdTe thin films has mixed phase of hexagonal and cubic crystal structure. The calculated crystallite size from the XRD measurement was found to be in the range of 9-12 nm. FESEM image showed uniform deposition of the material over entire glass substrate and film consists of interconnected spherical grains of nanometer size. Compositional analysis showed that the nanocrystalline CdTe thin film becomes cadmium deficient and tellurium richer. The optical absorption studies show that the films have a direct band gap of 1.51 eV. The room temperature resistivity of the synthesized nanocrystalline CdTe films measured by two probe method was found to 6.64 × 10 4 Ω.cm.

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Section: Optical Propertiessupporting

confidence: 92%

Section: Introductionmentioning

confidence: 99%

Structural and Optoelectronic Properties of Nanocrystalline CdTe Thin Films Synthesized by Using SILAR Technique

Samanta¹,

Salunke²,

Gosavi³

et al. 2017

J. Nano- Electron. Phys.

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“…The preparation of materials into thin films allows easy realization into different types of devices. Smooth and high-quality compound-semiconductor-based thin films usually depend on the growth process, e.g., rate of deposition, substrate temperature, synthesis temperature and pH of the solution, etc., generally at the nanometre scale [3]. Over several years, the study of II-VI binary semiconducting compounds related to cadmium chalcogenide group (CdS, CdSe and CdTe) has been intensified as they are considered to be very significant materials for photovoltaic applications [4].…”

Section: Introductionmentioning

confidence: 99%

Effect of $$\hbox {Ar}^{+}$$ Ar + ion implantation on the properties of electrodeposited CdTe thin films

Goyal

Chauhan

2018

Bull Mater Sci

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Semiconducting nanomaterials of II-VI groups are the key elements of continued technological approaches made in the field of optoelectronic, magnetic and photonic devices due to their size-dependent properties. Ion beams create changes in the material along their track; this not only exhibits excellent properties but also tailors new materials. This article reports the effect of Ar + ion implantation on the properties of cadmium telluride thin films of about 80 nm thickness. The implantation parameters were adjusted based on computer-aided learning using SRIM (stopping and range of ions in matter) software. The CdTe thin films were deposited by electrodeposition method on ITO substrate. Thin films of CdTe are exposed to Ar + ions with different fluencies of 1 × 10 15 , 5 × 10 15 and 1 × 10 16 ions cm −2 at Ion Beam Centre, Kurukshetra University, Kurukshetra, India. After implantation, the films were characterized using UV-visible spectroscopy, photoluminescence (PL) and a four-probe setup with a programmable current-voltage (I-V) source metre. The scanning electron microscopy of pristine film showed smooth and uniform growth of sphere-shaped grains on substrate surface. From optical studies, the values of optical band gap for as-deposited and argon-ion-implanted thin films were calculated. It was found that values of optical band gap decreased with the increase in fluence of ion beam. From PL studies it was found that the intensity got increased with ion fluence. A considerable increase in current was noticed from I-V measurements with ion fluence after implantation. Different properties of pre-and post-implanted thin films are studied.

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“…The redox potential, pH and reactants can be adjusted to optimize the deposition process. In this perspective, the ECALE technique is a valid approach for the attainment of II-VI [17][18][19][20], III-V [21][22][23] compounds, as well as ternary and quaternary semiconductors on conductive substrates [24,25].…”

Section: Introductionmentioning

confidence: 99%

Sn-deficiency in the electrodeposited ternary CuxSnySz thin films by ECALE

Caporali

Tolstogouzov

Teodoro

et al. 2015

Solar Energy Materials and Solar Cells

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Ternary Cu x Sn y S z thin films with different Cu/Sn atomic ratios and thicknesses have been electrochemically deposited on the (111) face of a silver single crystal. The surface morphology and chemical composition of these chalcogenides, which have attracted considerable worldwide interest as low cost high conversion efficiency photovoltaic devices, have been characterized by means of SEM, parallel angle resolved (PAR-XPS) and TOF-SIMS depth profiling in order to gain insight into the morphology and element distribution within the layer and their effect on the band gap. This study constitutes the first in-depth chemical study on Cu x Sn y S z thin films, providing evidence of notable discrepancies between the expected and real composition, especially regarding the Cu/Sn ratio. The samples were found to be chemically homogeneous through the whole deposit even though strongly tin depleted regardless their thickness or deposition sequence. Finally, the literature band gap data were discussed on the basis of these findings.

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Electrochemical growth and characterization of size-quantized CdTe thin films grown by underpotential deposition

Cited by 40 publications

References 36 publications

Structural and Optoelectronic Properties of Nanocrystalline CdTe Thin Films Synthesized by Using SILAR Technique

Structural and Optoelectronic Properties of Nanocrystalline CdTe Thin Films Synthesized by Using SILAR Technique

Effect of $$\hbox {Ar}^{+}$$ Ar + ion implantation on the properties of electrodeposited CdTe thin films

Sn-deficiency in the electrodeposited ternary CuxSnySz thin films by ECALE

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