Electrochemical growth of GaSe nanostructures and their Schottky barrier characteristics

Synthesis and characterization of surface patterned nanoimprinted in1–xCrxP/P(VDF‐TrFE) nanocomposite films for solar cell application potential

“…As a consequence of the inimitable characteristics of these materials that ascend at nanoscale, unconventional technologies as well as enhancements in the prevailing technologies have been made doable [11][12][13][14][15][16][17]. Semiconductor quantum dots (QDs) have exposed an immense potential due to their versatile applications, such as bio-probes, field effect transistors, lasers, metal ion sensors, LEDs, and photovoltaic devices [18][19][20][21][22][23][24][25][26][27][28][29]. Among them, InP QDs have found a prodigious contender as sensors, microwave diodes, data storage, and optoelectronic devices because of their distinctive narrow emission band and their capability to convey a widespread emission spectral range compared to group II-VI QD counterparts [30][31][32].…”