2017
DOI: 10.1007/s00339-017-1155-3
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Electrochemical growth of SnS thin film: application to the photocatalytic degradation of rhodamine B under visible light

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Cited by 22 publications
(10 citation statements)
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“…[ 70,80–82 ] The positive slope confirmed the n‐type conductivity of WO 3, and the electron concentrations for the WO 3 :150 °C:10 min and WO 3 :180 °C:10 min films were N D = 1.72 × 10 19 and 1.10 × 10 19 cm −3 , respectively. The values have been estimated from the MS relation, as follows [ 83–86 ] CSC2=2/[ eεε0A2NnormalD(EEfb) ]where e is the electron charge, ε the dielectric constant of WO 3 ( ε = 8), [ 87 ] ε 0 the permittivity of vacuum (8.85 × 10 −14 F cm −1 ), A the surface area, and N D the electron density, and 1 kHz was the frequency used for the measurements. The N D values are within the reported values for pure WO 3 .…”
Section: Resultsmentioning
confidence: 99%
See 1 more Smart Citation
“…[ 70,80–82 ] The positive slope confirmed the n‐type conductivity of WO 3, and the electron concentrations for the WO 3 :150 °C:10 min and WO 3 :180 °C:10 min films were N D = 1.72 × 10 19 and 1.10 × 10 19 cm −3 , respectively. The values have been estimated from the MS relation, as follows [ 83–86 ] CSC2=2/[ eεε0A2NnormalD(EEfb) ]where e is the electron charge, ε the dielectric constant of WO 3 ( ε = 8), [ 87 ] ε 0 the permittivity of vacuum (8.85 × 10 −14 F cm −1 ), A the surface area, and N D the electron density, and 1 kHz was the frequency used for the measurements. The N D values are within the reported values for pure WO 3 .…”
Section: Resultsmentioning
confidence: 99%
“…[70,[80][81][82] The positive slope confirmed the n-type conductivity of WO 3, and the electron concentrations for the WO 3 :150 C:10 min and WO 3 :180 C:10 min films were N D ¼ 1.72 Â 10 19 and 1.10 Â 10 19 cm À3 , respectively. The values have been estimated from the MS relation, as follows [83][84][85][86]…”
Section: Optical Characterizationmentioning
confidence: 99%
“…15−20 In addition, intrinsic p-type nature of SnS makes it promising for use as a photocathode material for PEC cells. 21−30 Recently, SnS photocathodes have been obtained from various fabrication methods such as solution-phase deposition, 29 spray pyrolysis, 21,25 electrochemical deposi-tion, 22,23,26,28 successive ionic layer adsorption and reaction (SILAR), 24 and chemical bath deposition (CBD). 27,30 These results generally revealed that SnS photocathodes can provide the enhanced photocurrents, as summarized in Table 1, which compares the performances of various SnS photocathodes.…”
mentioning
confidence: 99%
“…Earth-abundant nontoxic tin monosulfide (SnS, mineral Herzenbergite) is a potential candidate for such an application due to its optical band gap (1.4 to 1.7 eV), appropriate for solar energy absorption and high absorption coefficient (>10 4 cm –1 ). In addition, intrinsic p-type nature of SnS makes it promising for use as a photocathode material for PEC cells. Recently, SnS photocathodes have been obtained from various fabrication methods such as solution-phase deposition, spray pyrolysis, , electrochemical deposition, ,,, successive ionic layer adsorption and reaction (SILAR), and chemical bath deposition (CBD). , These results generally revealed that SnS photocathodes can provide the enhanced photocurrents, as summarized in Table , which compares the performances of various SnS photocathodes. The measured photocurrents are in the range of 0.6 to 0.7 mA cm –2 with stable cathodic operation in an aqueous solution with pH of ∼1, and they can be further improved by a proper preparation method for surface modification.…”
mentioning
confidence: 99%
“…Metal sulfide (MS x ) semiconductors generally possess relatively narrower bandgap (due to the shallow valence band of S 3p orbitals) than metal oxides, leading to visible‐light absorption, higher charge mobility, and easier charge separation . Among the heavily investigated metal sulfides, tin (II) sulfide (SnS) is a native p‐type semiconductor which exists in the natural mineral (herzenbergite), and features narrow bandgap (direct/indirect bandgap ≈1.5/1.1 eV), high density of free charge carriers (≈10 17 –10 18 cm −3 ), and an exceptionally high absorption coefficient (α) (>10 4 cm −1 above the band gap, desirable for photovoltaic applications) . It is generally regarded as one of the most promising materials for optoelectronic applications.…”
Section: Introductionmentioning
confidence: 99%