Electrochemical isotropic texturing of mc-Si wafers in KOH solution

Abburi, M.; Boström, Tobias; Olefjord, I.

doi:10.1016/j.matchemphys.2013.02.027

Cited by 6 publications

(3 citation statements)

References 24 publications

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“…The disadvantage of the anisotropic etching is the very low etch rate of monocrystalline silicon (111) oriented. 22 The reflectivity measurements carried out on a silicon surface (111) oriented and etched in NaOCl solution gives an average reflectivity value of about 35% in the wavelength range from 500 to 1100 nm, value similar to that obtained for the bare silicon wafer (Fig. 10).…”

Section: Resultssupporting

confidence: 71%

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Texture etching of monocrystalline silicon surface with sodium hypochlorite

Lounas¹,

Bouda²,

Menari³

et al. 2014

Surface Engineering

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Silicon etching in alkaline solutions has been employed for many years, in the fabrication of solar cells. Surface texturisation of crystalline silicon was performed by using different etching solutions. Recently, a strong oxidising reagent NaOCl has been used successfully by several authors to texture the silicon surface. In this work, the effect of the etching parameters such as solution composition on the silicon surface morphology is studied. The surface of etched samples was analysed by scanning electron microscopy (SEM), spectrophotometry and secondary ion mass spectroscopy (SIMS). The results clearly show that the presence of ethanol in the solution leads to the formation of pyramids, while its absence induces the formation of nanostructures (nanowire or nanoneedle).

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Section: Resultssupporting

confidence: 71%

“…The disadvantage of the anisotropic etching is the very low etch rate of monocrystalline silicon (111) oriented. 22…”

Section: Resultsmentioning

confidence: 99%

Texture etching of monocrystalline silicon surface with sodium hypochlorite

Lounas¹,

Bouda²,

Menari³

et al. 2014

Surface Engineering

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“…To the first group belong methods which are precise and provide to significant reductions in reflectance, but are expensive and time consuming. Among those methods we can distinguish laser structuring [3][4], plasma treatment [5], reactive ion etching with or without masking [6][7][8][9] and electrochemical treatment [10]. In opposite to them, the wet chemical methods are most commonly used in mass production.…”

Section: Introductionmentioning

confidence: 99%

Archives of Metallurgy and Materials

Kulesza-Matlak,

Gawlińska,

Starowicz

et al. 2018

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In this study a two-step short wet etching was implemented for the black silicon formation. The proposed structure consists of two steps. The first step: wet acidic etched pits-like morphology with a quite new solution of lowering the texturization temperature and second step: wires structure obtained by a metal assisted etching (MAE). The temperature of the process was chosen due to surface development control and surface defects limitation during texturing process. This allowed to maintain better minority carrier lifetime compared to etching in ambient temperature. On the top of the acidic texture the wires were formed with optimized height of 350 nm. The effective reflectance of presented black silicon structure in the wavelength range of 300-1100 nm was equal to 3.65%.

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