Electrochemical Luminescence of Gallium-Ion-Doped MgIn2O4 Electrodes

Abstract

Electrochemical luminescence (ECL) under anodic polarization involves an excitation process that is analogous to the excitation process of inorganic electroluminescence (EL) devices, i.e., the so-called impact excitation process. ECL is suitable for facilitating the exploration of new materials to be used for fabricating EL devices, because the luminescent property associated with ECL can be examined by simple electrochemical measurements without fabricating an emitting device. In the present study, MgIn 2 O 4 (MgGa x In 2−x O 4 ) doped with various amounts of Ga 3+ were synthesized and their ECL property was investigated to develop a new white-emitting EL material. The ECL spectra of the MgGa x In 2−x O 4 largely depended on the doped Ga 3+ content. The main peak in the emission spectra of a sample with x = 0.1 was a broad one (400-600 nm). With an increase in the Ga 3+ content, the MgGa x In 2−x O 4 samples with x = 0.2 and 0.3 showed two sharp emissions (in the form of lines) in the green region and these two sharp lines became main luminescence in the sample with x = 0.3. The surface of an electrode showed white-plane emission in the sample with x = 0.3. This change in the luminescent property upon changing the Ga 3+ content appears to be caused by the change in the distribution of the Ga 3+ ions in the MgGa x In 2−x O 4 structure.

Prediction of structure and cation ordering in an ordered normal-inverse double spinel

“…The fact that nearly all of the main group and transition metals can be synthesized in a stable spinel structure makes it a relatively large family of compounds with manifold compositions, cation ordering, electron configurations, and valence states 9 . Owing to this large synthetic flexibility and a wide range of atomic and electronic configurations accessible within this chemical space, spinels exhibit interesting magnetic 5,10,11 , electronic 12,13 , optical 14 , and catalytic 15,16 properties useful for a diverse range of applications, including data storage 17 , high frequency electronic devices 18 , dielectrics 19 , transparent conducting oxides [20][21][22][23] , lasers 24,25 , sensing 2 , energy storage 26,27 , superconductivity 28 , and biotechnology 29 .…”

First Principle Study of Structural, Electronic, and Optical Properties of XIn2S4 (X = Zn, Cd, Hg)

“…The chemical formula of Spinals is AB2X4 (where A and B are most likely divalent and trivalent metallic cations, respectively), and X is an anion that forms tetrahedrons and octahedrons around A and B ions, respectively (Bragg, 1915;Nishikawa, 1915). The large variety of verified synthesis techniques for the fabrication of spinels made it feasible to tune their surface features and lattice parameters (Cheng et al, 2011;Radaelli et al, 2002), consequently, fluctuating valence states of individual atoms and their relevant compositions have demonstrated robust impact upon physical characteristics of material (Cho, Lee, Lee, Hong, & Cho, 2011;Kaczmarczyk et al, 2016;Marco et al, 2001;Sonoyama, Kawamura, Yamada, & Kanno, 2006;Zhao, Yan, Chen, & Chen, 2017). In spite of the fact that transparent conducting materials (TCM) have been proved to be valuable for diverse commercial optical applications (Brunin, Ricci, Ha, Rignanese, & Hautier, 2019), but still, traditional transparent conducting oxides (TCOs) shows complex characteristics because of the microstructures' complexity (Ginley & Bright, 2000).…”