Electrochemical memristive devices based on submonolayer metal deposition

Pragnya, Prachi; Pinkowitz, Ainsley; Hull, R.; Gall, Daniel

doi:10.1063/1.5110889

Cited by 8 publications

(3 citation statements)

References 48 publications

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“…24 Inconel-625 and salt layer deposition.-50 nm thick Inconel-625 films are sputter deposited onto silicon-oxy-nitride Hummingbird TEM heater-chips in a ultra-high vacuum deposition system with a base pressure below 10 −8 Torr. [26][27][28] Deposition is done in 5.0 mTorr 99.999% Ar by applying a constant dc power of 200 W to a magnetron with a 5 cm diameter Inconel-625 target while maintaining the substrate temperature at 600 °C. Immediately following the deposition, the entire chip is annealed stepwise at 700 °C, 800 °C, 900 °C, and 1000 °C for 30 min each in the same vacuum system.…”

Section: Methodsmentioning

confidence: 99%

In Situ High-Temperature TEM Observation of Inconel Corrosion by Molten Chloride Salts with N₂, O₂, or H₂O

Pragnya¹,

Gall²,

Hull³

2022

J. Electrochem. Soc.

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In situ TEM is used to understand corrosion of Inconel-625 by chloride salts (MgCl2 − NaCl − KCl) at 500-800°C in 1.0 atm inert N2 or pure O2, or hydrated salts. The isothermal corrosion rate R in inert N2 increases from 203 ± 30 μm year-1 at 700°C to 463 ± 30 μm year-1 at 800°C. An oxygen ambient causes a six-fold increase to R = 1261 ± 170 μm year-1. Salt hydration dramatically accelerates corrosion to R > 3×105 μm year-. These isothermal corrosion rates indicate that the molten chloride corrosion is significantly accelerated by salt hydration at temperatures above 600°C. To reduce the rate of corrosion it is important to both avoid incorporation of H2O into the system and ensure proper flushing before increasing the temperature beyond 600°C. In addition, steps should be taken to tailor chloride melt compositions that has low solubility for HCl and O2. All of our corroded samples exhibit passive-protective oxide layers of Cr, Mg, and Ni. In addition, distinct volatile compounds are detected. To minimize corrosion formation of volatile by-products should be avoided.

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Section: Methodsmentioning

confidence: 99%

In Situ High-Temperature TEM Observation of Inconel Corrosion by Molten Chloride Salts with N₂, O₂, or H₂O

Pragnya¹,

Gall²,

Hull³

2022

J. Electrochem. Soc.

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“…Commonly used physical deposition techniques include sputtering, atomic layer deposition, e-beam deposition, and pulsed laser deposition. However, given that cost-effectiveness and ease of solution processability are crucial for the fabrication of RS devices, chemical approaches have become more widespread, including hydrothermal methods [ 23 , 24 ], spray deposition [ 25 ], SILAR [ 26 ], spin coating [ 27 , 28 ], drop-casting [ 29 ], microwave [ 30 ], screen printing [ 31 , 32 ], doctor blading, and electrochemical methods [ 33 ]. In terms of the direction and advancement of RS performance, it is essential to comprehend the impact of synthesis procedures, including the cost.…”

Section: Introductionmentioning

confidence: 99%

Review of Electrochemically Synthesized Resistive Switching Devices: Memory Storage, Neuromorphic Computing, and Sensing Applications

et al. 2023

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Resistive-switching-based memory devices meet most of the requirements for use in next-generation information and communication technology applications, including standalone memory devices, neuromorphic hardware, and embedded sensing devices with on-chip storage, due to their low cost, excellent memory retention, compatibility with 3D integration, in-memory computing capabilities, and ease of fabrication. Electrochemical synthesis is the most widespread technique for the fabrication of state-of-the-art memory devices. The present review article summarizes the electrochemical approaches that have been proposed for the fabrication of switching, memristor, and memristive devices for memory storage, neuromorphic computing, and sensing applications, highlighting their various advantages and performance metrics. We also present the challenges and future research directions for this field in the concluding section.

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“…Thus, the development and investigation of memristive structures, in which the SOI substrate acts as an electrode, is of considerable theoretical and practical interest. However, such data are nearly absent in the literature, except for several separate reports on the use of SOI in memristive devices (see, for example, [47][48][49][50]).…”

Section: Introductionmentioning

confidence: 99%

Silicon-Compatible Memristive Devices Tailored by Laser and Thermal Treatments

Koryazhkina

Филатов

Тихов

et al. 2022

JLPEA

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Nowadays, memristors are of considerable interest to researchers and engineers due to the promise they hold for the creation of power-efficient memristor-based information or computing systems. In particular, this refers to memristive devices based on the resistive switching phenomenon, which in most cases are fabricated in the form of metal–insulator–metal structures. At the same time, the demand for compatibility with the standard fabrication process of complementary metal–oxide semiconductors makes it relevant from a practical point of view to fabricate memristive devices directly on a silicon or SOI (silicon on insulator) substrate. Here we have investigated the electrical characteristics and resistive switching of SiOx- and SiNx-based memristors fabricated on SOI substrates and subjected to additional laser treatment and thermal treatment. The investigated memristors do not require electroforming and demonstrate a synaptic type of resistive switching. It is found that the parameters of resistive switching of SiOx- and SiNx-based memristors on SOI substrates are remarkably improved. In particular, the laser treatment gives rise to a significant increase in the hysteresis loop in I–V curves of SiNx-based memristors. Moreover, for SiOx-based memristors, the thermal treatment used after the laser treatment produces a notable decrease in the resistive switching voltage.

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Electrochemical memristive devices based on submonolayer metal deposition

Cited by 8 publications

References 48 publications

In Situ High-Temperature TEM Observation of Inconel Corrosion by Molten Chloride Salts with N₂, O₂, or H₂O

In Situ High-Temperature TEM Observation of Inconel Corrosion by Molten Chloride Salts with N₂, O₂, or H₂O

Review of Electrochemically Synthesized Resistive Switching Devices: Memory Storage, Neuromorphic Computing, and Sensing Applications

Silicon-Compatible Memristive Devices Tailored by Laser and Thermal Treatments

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Electrochemical memristive devices based on submonolayer metal deposition

Cited by 8 publications

References 48 publications

In Situ High-Temperature TEM Observation of Inconel Corrosion by Molten Chloride Salts with N2, O2, or H2O

In Situ High-Temperature TEM Observation of Inconel Corrosion by Molten Chloride Salts with N2, O2, or H2O

Review of Electrochemically Synthesized Resistive Switching Devices: Memory Storage, Neuromorphic Computing, and Sensing Applications

Silicon-Compatible Memristive Devices Tailored by Laser and Thermal Treatments

Contact Info

Product

Resources

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In Situ High-Temperature TEM Observation of Inconel Corrosion by Molten Chloride Salts with N₂, O₂, or H₂O

In Situ High-Temperature TEM Observation of Inconel Corrosion by Molten Chloride Salts with N₂, O₂, or H₂O