Electrochemical metallization cell with solid phase tunable Ge2Sb2Te5 electrolyte

Zhang, Ziyang; Wang, Yaoyuan; Wang, Guanghan; Mu, Jiaming; Ma, Mingyuan; He, Yuhan; Yang, Rui; Li, Huanglong

doi:10.1038/s41598-018-29778-9

Cited by 15 publications

(21 citation statements)

References 26 publications

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“…This promising prospect has stimulated a significant amount of effort to investigate the resistive switching behavior of chalcogenide materials . Several chalcogenide alloys including GeSbTe, ,− AgGeSe, AgGeTe, and AgInSbTe have been reported to demonstrate the resistive switching behavior. In most cases, the resistive switching effects observed in chalcogenide materials are induced by connecting and breaking the CFs from the migration of metal cations (e.g., Cu and Ag) provided by active (oxidizable) electrodes, ,− ,,, which is also known as the electrochemical metallization (ECM) process.…”

Section: Introductionmentioning

confidence: 99%

“…Several chalcogenide alloys including GeSbTe, ,− AgGeSe, AgGeTe, and AgInSbTe have been reported to demonstrate the resistive switching behavior. In most cases, the resistive switching effects observed in chalcogenide materials are induced by connecting and breaking the CFs from the migration of metal cations (e.g., Cu and Ag) provided by active (oxidizable) electrodes, ,− ,,, which is also known as the electrochemical metallization (ECM) process. This process, which requires adoption of Ag or Cu as the active metallic element, could pose a problem with contamination control in mass-production lines for semiconductor device fabrication .…”

Section: Introductionmentioning

confidence: 99%

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Electrodeposition of GeSbTe-Based Resistive Switching Memory in Crossbar Arrays

et al. 2021

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In this work, we report on the fabrication of resistive random-access memory cells based on electrodeposited GeSbTe material between TiN top and bottom electrodes in a crossbar architecture. The cells exhibit asymmetric bipolar resistive switching characteristics under the same SET and RESET compliance current (CC), showing highly uniform and reproducible switching properties. A multi-state switching behavior can be also achieved by varying the sweeping voltage and CC. Unlike phase-change switching, the switching between the high-resistance state and the low-resistance state in these cells can be attributed to the formation and rupture of conductive Te bridge(s) within the Te-rich GeSbTe matrix upon application of a high electric field. The results point toward the usage of the electrodeposition method to fabricate advanced functional device structures for application in non-volatile memory.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Electrodeposition of GeSbTe-Based Resistive Switching Memory in Crossbar Arrays

et al. 2021

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“…Actually, PCMs have often been utilized as the dielectric layer in EC-RS devices but most of these devices used electrochemically active Ag or Cu electrodes. [71][72][73][74] Recently, the use of Te electrodes was also found to enable RS [59][60][61][62][63][64] in which the formation of local conducting filaments led to HR-to-LR transition while the rupture of filaments led to the reverse transition. In order to confirm whether the RS phenomenon for our Te/Sb2Te3/Te devices was based on such process, we measured the electrode area dependent HRs and LRs of the device in the NV-RS (under 500 μA CC) and V-RS (under 1.5 mA CC) modes, respectively.…”

Section: Resultsmentioning

confidence: 99%

“…In order to satisfy the device requirements in different application domains, the ability to regulate the RS behaviors is important. Previous studies have shown that for the same filamentary materials the dielectric matrixes might have significant influence on the RS behaviors [74,[97][98][99] . The rate of the EC redox process, ion mobility and dielectric conductivity have been considered as the main regulators.…”

Section: Resultsmentioning

confidence: 99%

A new opportunity for the emerging tellurium semiconductor: resistive switching device implementation

Yang

et al. 2021

Preprint

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The electrochemical (EC) resistive switching (RS) cross-point arrays, composed of nonvolatile RS (NV-RS) memories and volatile RS (V-RS) selectors, hold promise for high-density data storage, in-memory computing and neuromorphic computing. However, the conventional EC-RS devices based on metallic filaments suffer from the notorious current-volatility dilemma that the low and high current requirements for NV-RS memories and V-RS selectors, respectively, cannot be satisfied simultaneously, due to the dominant EC nature of the RS. In this work, we demonstrate electrochemically active, low thermal-conductivity and low melting-temperature semiconducting tellurium filament-based RS devices that solve this dilemma, enabling NV-RS memories to operate under lower currents than do V-RS selectors. This novel phenomenon arises as the consequence of the adversarial EC and Joule heating (JH) effects. The devices also show unusual stimulus frequency dependent long-term plasticity (LTP)-to-short-term plasticity (STP) transition. Devices with this property can be generically utilized as spatial-temporal filters in spiking neural networks (SNNs) for high-performance event-based visual recognition tasks, as illustrated in our noise filtering simulations. By regulating the EC-JH relationship using dielectric materials with decreasing thermal conductivities, full functional-range tunable Te filament-based devices, from always-NV RS, to NV-to-V transitionable RS, and to always-V RS, are also demonstrated. The tellurium filament-based RS devices are promising enablers for functional cross-point arrays.

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“…Moreover, ECM kinetics have been found to be highly electrolyte dependent, leading to diverse filament growth modes and structures 17,18 . However, the random and frequent migration of cations from the active metal electrode into the electrolyte layer may result in poor uniformity, inferior retention of the LRS, and deterioration of reliability in ECM devices.…”

Section: Introductionmentioning

confidence: 99%

Understanding filamentary growth and rupture by Ag ion migration through single-crystalline 2D layered CrPS4

et al. 2020

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Memristive electrochemical metallization (ECM) devices based on cation migration and electrochemical metallization in solid electrolytes are considered promising for neuromorphic computing systems. Two-dimensional (2D) layered materials are emerging as potential candidates for electrolytes in reliable ECM devices due to their two-dimensionally confined material properties. However, electrochemical metallization within a single-crystalline 2D layered material has not yet been verified. Here, we use transmission electron microscopy and energy-dispersive X-ray spectroscopy to investigate the resistive switching mechanism of an ECM device containing a single-crystalline 2D layered CrPS4 electrolyte. We observe the various conductive filament (CF) configurations induced by an applied voltage in an Ag/CrPS4/Au device in the initial/low-resistance/high-resistance/breakdown states. These observations provide concrete experimental evidence that CFs consisting of Ag metal can be formed inside single-crystalline 2D layered CrPS4 and that their configuration can be changed by an applied voltage. Density functional theory calculations confirm that the sulfur vacancies in single-crystalline CrPS4 can facilitate Ag ion migration from the active electrode layer. The electrically induced changes in Ag CFs inside single-crystalline 2D layered CrPS4 raise the possibility of a reliable ECM device that exploits the properties of two-dimensionally confined materials.

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Electrochemical metallization cell with solid phase tunable Ge2Sb2Te5 electrolyte

Cited by 15 publications

References 26 publications

Electrodeposition of GeSbTe-Based Resistive Switching Memory in Crossbar Arrays

Electrodeposition of GeSbTe-Based Resistive Switching Memory in Crossbar Arrays

A new opportunity for the emerging tellurium semiconductor: resistive switching device implementation

Understanding filamentary growth and rupture by Ag ion migration through single-crystalline 2D layered CrPS4

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