Electrochemical, Optical and Morphological Characterizations of Cu Doped ZnO Nanostructure Thin Films Prepared by Spin Coating Method

Abstract

From nanotechnology point of view where conductivity is crucial, although it is essential to determine the electrochemical properties Cu doped ZnO nanostructure thin films produced by spin coating, there are rare studies in the literature. Therefore, in this study, the aim was to examine thouroughly the electrochemical properties of nanostructure thin films which were grown on glass substrates by using a facile and cost-effective spin coating method. The effects of the dopant on the morphological, optical and electrochemical properties of ZnO nanostructure thin films doped with Cu at different concentrations (0-50%) were investigated by SEM, XRF, FTIR, UV-vis, mechanical profilometer, and cyclic voltametry. The absorption spectra of the samples revealed that the energy band gap value decreased by the incereasing of Cu doping concentration. SEM images depicted that more spherical and homogeneous nanostructures formed with the doping of Cu. Electrochemical results showed that increasing the Cu doping ratio in ZnO nanoparticles results in higher electron transfer indicating that the conductivity of ZnO nanostructured thin films increases with Cu doping. It can be concluded that it is possible to produce more homogeneous, wider spectrum absorption capable and more conductive nanostructure thin films by a simple and inexpensive method. It is envisaged that the thin films obtained are promising for a wide range of nanotechnology applications.

Influence of Copper Doping on Structural and Opto-Electronic Properties of Zinc Oxide Nanoparticles

“…Cu inclusion in ZnO results in high electronic conductivity as well as good donor defects. Cu doping increase charge separation and improve charge transport characteristics [6][7][8][9]. Basically, zinc oxide with a wurtzite crystal structure is a favorable n-type semiconducting material having direct wide band-gap energy of 3.37 eV with rapid charge carrier recombination abilities [10], and large exciton binding energy [11] having long-term thermal and chemical stabilities [12][13].…”