2019
DOI: 10.5796/electrochemistry.18-00002
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Electrochemical Oscillations during Electro-oxidation of Copper Anode in Phosphoric Acid Solution

Abstract: This paper reports the occurrence of electrochemical oscillations (EOs) in Cu electro-oxidation of phosphoric acid solution, and systematically investigated the effect of potential, electrolyte composition and concentration, temperature, stirring rate, and scanning speed on EOs. The mechanism of EOs occurred as a result of deposition and dissolution effects of CuH 2 PO 4 through electro-oxidation of the Cu anode. The experimental result for amplitude and frequency can be explained by this simplified qualitativ… Show more

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Cited by 10 publications
(4 citation statements)
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“…1b, curves 2 and 3) appear on the curves at the ratio of H 3 PO 4 :H 2 O = 1:2 and lower. 27 The polarization dependence of copper in the phosphate butanol solution at the ratio of C 4 H 9 OН:H 3 PO 4 = 1:1 is characterized by the availability of an explicit peak, which separates the regions of the active and passive states of copper (Fig. 1a, curve 1).…”
Section: Resultsmentioning
confidence: 99%
“…1b, curves 2 and 3) appear on the curves at the ratio of H 3 PO 4 :H 2 O = 1:2 and lower. 27 The polarization dependence of copper in the phosphate butanol solution at the ratio of C 4 H 9 OН:H 3 PO 4 = 1:1 is characterized by the availability of an explicit peak, which separates the regions of the active and passive states of copper (Fig. 1a, curve 1).…”
Section: Resultsmentioning
confidence: 99%
“…At the same time, we selected another H 3 PO 4 -based copper etchant (Cu Etch-N1) for testing. The etching rate of the etchant of Cu Etch-N1 is at 25 °C for 0.375 μm/min, in which the mechanism of redox is as follows 21 …”
Section: Resultsmentioning
confidence: 99%
“…At the same time, we selected another H 3 PO 4 -based copper etchant (Cu Etch-N1) for testing. The etching rate of the etchant of Cu Etch-N1 is at 25 °C for 0.375 μm/min, in which the mechanism of redox is as follows 21 Cu Early work on the etching rate of amorphous titanium oxide (TiO 2 ) in phosphoric acid was done by Okazaki et al 22 The etching rate is of approximately 1 nm/min with the immersion test of the TiO 2 film in 85% by weight H 3 PO 4 at 80 °C. 23 In the previous study, the etching rate of TiO 2 was dependent on the concentration and temperature of H 3 PO 4 .…”
Section: Cumentioning
confidence: 99%
“…For example, various metals exhibit current or potential oscillations when dissolved under appropriate conditions. [17][18][19][20][21][22][23][24][25][26][27][28] In general, an N-shaped negative differential resistance (N-NDR) plays a crucial role in the appearance of oscillations because it results in oscillatory instability. 15,16,29,30 Most oscillations can be classified as N-NDR or "hidden" N-NDR (HN-NDR) oscillators.…”
mentioning
confidence: 99%