Technological advances in the operation and performance of microelectronic, optical, magnetic, and, more recently, energy conversion devices depend in large part on an ever-increasing accuracy of material synthesis and film fabrication methods. In particular, the ongoing miniaturization of devices requires strict control of the crystal structure and microstructure in film as well as patterned structures, often down to the atomic scale.Electrodeposition has an important role to play in this pursuit toward miniaturization and enhanced performance [1]. Underpotential deposition (UPD) [2, 3] and surface-limited redox replacement (SLRR) [4] exploit the low energy of the metal ion precursors in solution (of the order of the thermal energy, 0.025-0.03 eV) to control the formation or replacement of single atomic layers via self-limiting processes. In UPD, a monoatomic layer of metal M is deposited on a conductive substrate S at a potential more positive than the redox potential of M [2]. This shift in redox potential is made possible by the fact that the M-S bond is stronger than the M-M bond; since the effective pair interaction V eff = V MM + V SS − 2V MS is typically in the order of 0.01-0.1 eV, only low energy precursors are sensitive to these energy differences, thus limiting the deposit to one (or sometimes two) atomic layers. SLRR involves UPD monolayer formation, followed by displacement of this layer with a full or partial monolayer of a more noble element, through a cementation process [4]. An analogous process, selective electrodesorption-based atomic layer deposition (SEBALD) consists in the formation at UPD of a sacrificial sulfur monolayer to induce UPD of late transition metals such as Fe, Co, and Ni in the form of monolayers or nanosized islands [5].Underpotential codeposition (UPCD) is a generalization of the UPD process, whereby alloy electrodeposition occurs at potentials more positive than the redox potential of the less noble element [6]. UPCD is made possible by the effective atomic pair interactions in the solid state, or equivalently by the alloying bond enthalpy. In contrast with UPD, UPCD is used to form alloy films of arbitrary