Electrochemical photovoltaic studies of Cd1−xCoxS thin film electrodes deposited by a liquid phase chemical deposition route

Cd(Zn, S)Se quaternary thin films for electrochemical photovoltaic cell application

“…This increase in V fb can be attributed to (a) the augmented electron affinity of CdSe films owing to the integration of Zn and S and (b) the better surface adsorption and formation of the additional donor levels in the optical gap of CdSe, which shifts the Fermi level in the upward position. The decay in V fb at higher compositions (˃0.075) can be related to the pinning of the Fermi level …”

“…Previously, we reported the photoconversion of the solar cells by altering the materials' chemical composition, morphology, and optoelectronic properties. Observations from the report are (a) n‐type Cd 1−x Co x S electrode revealed I sc = 0.196 mA/cm 2 and V oc = 414 mV with 3.84% efficiency and 47.01% FF in a 0.25M sulfide/polysulfide redox electrolyte, (b) the Cd 1‐x In x Se (0 ≤ x ≤ 0.1) based EPV cell showed 1.04% efficiency, and (c) PEC cell configuration of Co 1−x−y Zn x Cd y S (thin film electrode)/0.5 M KCl/C demonstrated the conversion efficiency of 1.06% for x = y = 0.15 …”

“…21 Previously, we reported the photoconversion of the solar cells by altering the materials' chemical composition, morphology, and optoelectronic properties. Observations from the report are (a) n-type Cd 1−x Co x S electrode revealed I sc = 0.196 mA/cm 2 and V oc = 414 mV with 3.84% efficiency and 47.01% FF in a 0.25M sulfide/polysulfide redox electrolyte, 22 (b) the Cd 1-x In x Se (0 ≤ x ≤ 0.1) based EPV cell showed 1.04% efficiency, 23 and (c) PEC cell configuration of Co 1−x−y Zn x Cd y S (thin film electrode)/0.5 M KCl/C demonstrated the conversion efficiency of 1.06% for x = y = 0.15. 24 Therefore, considering the above-mentioned particulars and conceivable benefits of stability, sensitivity, ageing, photocorrosion, and responsivity of Cd-Zn-S-Se system over the binary CdS, ZnS, CdSe, and ZnSe, we propose the chemical synthesis of quaternary Cd 1−x Zn x S y Se 1−y material as thin films and employ them in an EPV cell.…”

Studies on the Zn x Co 1−x S thin films: A facile synthesis process and characteristic properties

“…A systematic increase in α may be attributed to the creation of more localized states within the band tails of valence and conduction bands due to the existence of defects and disorders [31][32][33]. The lower wavelength range shift in the absorption coefficient with increase in Zn content can be explained with sp-d exchange interaction between the band electrons in CoS and localized d electrons in Zn 2+ [8,9,32,34,35]. In the present system, zinc plays a two-fold role [34,35]: first, it occupies partially vacant Co sites and manipulates the defect states and secondly, it forms a semiconducting alloy whose composition controls the band structure and lattice spacing.…”

“…In general, film microstructures consist of a fuzzy network of elongated crystallites reminiscent of flakes with polygon shaped vacant spaces between them. Such porous thin films are of prime importance as electrode material in super capacitive applications[8,9]. Inconsequence overgrowth with the formation of a sluggish layer over the entire microstructure and a sort of recrystallization has also been evidenced for lower concentration of Zn in CoS (x = 0 to 0.075).…”