2019
DOI: 10.1016/j.optmat.2019.05.017
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Electrochemical polymerization of ambipolar carbonyl-functionalized indenofluorene with memristive properties

Abstract: Carbonyl-functionalized indenofluorene was electropolymerized with a high faradaic efficiency of 85% and the solid state properties of the resulting polymeric thin films were investigated. They displayed modular optical properties depending on their oxidation state. The approach used for inorganic semiconductors was applied to polyindeonofluorene derivative. Mott-Schottky analysis evidenced a switching from p-type to n-type electrical conduction, suggesting an ambipolar behaviour of the polymer. As an applicat… Show more

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Cited by 20 publications
(6 citation statements)
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“…With the development of science and technology, flexible memory has also been extensively studied in the past decade [12,13]. Due to the advantages of their being inexpensive and lightweight, flexible memristors are more widely used than non-flexible devices such as disposable sensors [14] or indenofluorene-based monomers [15].…”
Section: Introductionmentioning
confidence: 99%
“…With the development of science and technology, flexible memory has also been extensively studied in the past decade [12,13]. Due to the advantages of their being inexpensive and lightweight, flexible memristors are more widely used than non-flexible devices such as disposable sensors [14] or indenofluorene-based monomers [15].…”
Section: Introductionmentioning
confidence: 99%
“…The difference between these parameters and those in Table 1 are insignificant. The methods used can be applied in the analysis of a wide range of characteristic memristor CVCs [44][45][46][47].…”
Section: Model Training and Applicationmentioning
confidence: 99%
“…Memristors are resistive non-volatile memory devices that are attracting significant interest within the scientific community because of their simple structure, high speed, low power dissipation, and high scaling capability [1][2][3][4].…”
Section: Introductionmentioning
confidence: 99%
“…The DC I-V characteristic of these devices presents a hysteresis cycle [1][2][3][4]. A current limitation is usually imposed, during electrical characterisation, to avoid any damage to the device especially during the switching to the ON state [2].…”
Section: Introductionmentioning
confidence: 99%