“…ZnO, with a direct band gap of approximately 3.37 eV, can effectively absorb UV light but not visible light; therefore, it is an ideal material for UV photoelectric devices 4 – 10 To date, various ZnO heterostructures for use as photodetectors have been constructed, such as p-Si nanowire/ZnO, 11 BeMgZnO/ZnO, 12 ZnO−SnO2, 13 ZnO/graphene, 14 and Cu3(HHTP)2 c-MOF/ZnO heterostructures 15 . Ouyang et al.…”