Room-temperature
electrodeposition of Ge crystallites was investigated
by the electrochemical liquid–liquid–solid (ec-LLS)
process using a family of Hg1–x
In
x
alloys. The objective was to determine
whether different liquid metal alloys with nominally the same bulk
solubility toward Ge but potentially different surface character would
yield any differences in the resultant Ge crystallites. Variation
of the In fraction in these alloys was the control variable. The following
details were ascertained from the cumulative data. First, in accordance
with thermodynamic predictions, the surface of Hg
x
In1–x
alloys was strongly
enriched with Hg according to X-ray specular reflectivity data. These
data further indicated that the surface enrichment was confined exclusively
to a single atomic layer at the liquid metal surface. These properties
of the Hg1–x
In
x
/electrolyte interface structure facilitated the first two
steps of the ec-LLS process. Second, the presence of In influenced
the morphology of the resultant Ge crystallites from ec-LLS, in accordance
with mediated transport of the Ge upon initial electroreduction. Specifically,
X-ray diffraction, Raman, and microscopy data suggest that a strong
affinity between In and Ge that affects the crystal morphology. This
study thus motivates further exploration of both In as a component
in liquid metal solvents to facilitate grain size and more general
studies detailing how the surface structure and composition of liquid
metals influence crystal growth. These findings significantly advance
the prospect for preparing technologically relevant inorganic crystalline
semiconductors at low temperatures.