Electrochemical synthesis of CuInSe2 for thin film devices

Raffaelle, Ryne P.; Potdevin, T.; Hepp, Aloysius F.; Bailey, Sheila G.

doi:10.1016/s1369-8001(99)00025-6

Cited by 13 publications

(8 citation statements)

References 13 publications

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“…The microstructure of the electrodeposited films, as deduced from SEM measurements (Fig. 1b), is typical of the electrodeposited CuInSe 2 films as already reported [15,16,17] regardless of both the substrate size (5 × 5 cm 2 or 30 × 30 cm 2 ) and the spotting shots (centre vs. edge of the substrates). The films are relatively porous with the presence of some spherical clusters (2-3 nm) at their surface; some of them being agglomerated leading to the typical cauliflower shape.…”

Section: Electrodeposited Precursorssupporting

confidence: 75%

Influence of secondary phases during annealing on re-crystallization of CuInSe2 electrodeposited films

et al. 2009

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Electrodeposited CuInSe 2 thin films are of potential importance, as light absorber material, in the next generation of photovoltaic cells as long as we can optimize their annealing process to obtain dense and highly crystalline films. The intent of this study was to gain a basic understanding of the key experimental parameters governing the structural-textural-composition evolution of thin films as function of the annealing temperature via X-ray diffraction, scanning/transmission electron microscopy and thermal analysis measurements. The crystallization of the electrodeposited CuInSe 2 films, with the presence of Se and orthorhombic Cu 2 − x Se (o-Cu 2 − x Se) phases, occurs over two distinct temperature ranges, between 220°C and 250°C and beyond 520°C. Such domains of temperature are consistent with the melting of elemental Se and the binary CuSe phase, respectively. The CuSe phase forming during annealing results from the reaction between the two secondary species o-Cu 2 − x Se and Se (o-Cu 2 − x Se + Se → 2 CuSe) but can be decomposed into the cubic β-Cu 2 − x Se phase by slowing down the heating rate. Formation of liquid CuSe beyond 520°C seems to govern both the grain size of the films and the porosity of the substrate-CuInSe 2 film interface. A simple model explaining the competitive interplay between the film crystallinity and the interface porosity is proposed, aiming at an improved protocol based on temperature range, which will enable to enhance the film crystalline nature while limiting the interface porosity.

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Section: Electrodeposited Precursorssupporting

confidence: 75%

Influence of secondary phases during annealing on re-crystallization of CuInSe2 electrodeposited films

et al. 2009

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Section: Introductionmentioning

confidence: 99%

Synthesis and Characterization of Colloidal CuInS₂Nanoparticles from a Molecular Single-Source Precursor

et al. 2004

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Thermal decomposition of the molecular single-source precursor (PPh 3 ) 2 CuIn(SEt) 4 in the presence of hexanethiol in dioctylphthalate forms colloidal CuInS 2 at 200 °C. The colloidal solution displays size-dependent quantum confinement behavior in the absorption and photoluminescence spectra. The average size of the nanocrystals can be increased from 2 to 4 nm by raising the reaction temperature from 200 °C to 250 °C. The nanoparticles are capped with hexanethiol ligands; these ligands can be exchanged with trioctylphosphine oxide or pyridine. The nature of the surface-capping ligands has a significant effect on the photoluminescence emission intensity. Investigation of the effect of synthesis parameters and postsynthesis treatments on the optical properties of the nanocrystals leads to the conclusion that the room-temperature emission originates in donor-acceptor defects.

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“…These precursors can be designed with many properties in mind, including stoichiometry, solubility, and volatility. Our group has studied the synthesis of single-source precursors to CuInS 2 and CuInSe 2 , and the subsequent conversion of these precursors to thin films of the bulk semiconducting materials. − The molecular precursor (PPh 3 ) 2 CuIn(SEt) 4 (Figure ) was first described by Hirpo et al in 1993 . This charge-neutral molecule comprises a copper(I) ion bound by two triphenylphosphine ligands, an indium(III) ion with two terminal ethanethiolate ligands, and two ethanethiolate ligands coordinated in a m 2-bridging manner between the metal centers.…”

Section: Introductionmentioning

confidence: 99%

Nanocrystalline Chalcopyrite Materials (CuInS₂and CuInSe₂) via Low-Temperature Pyrolysis of Molecular Single-Source Precursors

et al. 2003

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Nanometer-sized particles of the chalcopyrite compounds CuInS 2 and CuInSe 2 were synthesized by thermal decomposition of molecular single-source precursors (PPh 3 ) 2 CuIn-(SEt) 4 and (PPh 3 ) 2 CuIn(SePh) 4 , respectively, in the noncoordinating solvent dioctyl phthalate at temperatures between 200 and 300 °C. The nanoparticles range in size from 3 to 30 nm and are aggregated to form roughly spherical clusters of about 500 nm in diameter. X-ray diffraction of the nanoparticle powders shows greatly broadened lines, indicative of very small particle sizes, which is confirmed by TEM. Peaks present in the XRD can be indexed to reference patterns for the respective chalcopyrite compounds. Optical spectroscopy and elemental analysis by energy dispersive spectroscopy support the identification of the nanoparticles as chalcopyrites.

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Electrochemical synthesis of CuInSe2 for thin film devices

Cited by 13 publications

References 13 publications

Influence of secondary phases during annealing on re-crystallization of CuInSe2 electrodeposited films

Influence of secondary phases during annealing on re-crystallization of CuInSe2 electrodeposited films

Synthesis and Characterization of Colloidal CuInS₂Nanoparticles from a Molecular Single-Source Precursor

Nanocrystalline Chalcopyrite Materials (CuInS₂and CuInSe₂) via Low-Temperature Pyrolysis of Molecular Single-Source Precursors

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Electrochemical synthesis of CuInSe2 for thin film devices

Cited by 13 publications

References 13 publications

Influence of secondary phases during annealing on re-crystallization of CuInSe2 electrodeposited films

Influence of secondary phases during annealing on re-crystallization of CuInSe2 electrodeposited films

Synthesis and Characterization of Colloidal CuInS2Nanoparticles from a Molecular Single-Source Precursor

Nanocrystalline Chalcopyrite Materials (CuInS2and CuInSe2) via Low-Temperature Pyrolysis of Molecular Single-Source Precursors

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Product

Resources

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Synthesis and Characterization of Colloidal CuInS₂Nanoparticles from a Molecular Single-Source Precursor

Nanocrystalline Chalcopyrite Materials (CuInS₂and CuInSe₂) via Low-Temperature Pyrolysis of Molecular Single-Source Precursors