Electrochemical Synthesis of CuS Thin Film for Supercapacitor Application

Abstract

In present research, walnut like copper sulfide is prepared via a facile single‐step potentiostatic electrodeposition method on conducting stainless steel substrate. The walnut like morphology of copper sulfide thin film lies of microplates and further microplates converted to nanogranuals, by means of a change in deposition time and thickness. Copper sulfide thin film electrode reveals a specific capacitance of 132 F g−1 at 50 mA cm−2. The film thickness changes with deposition time. The films acquire maximum thickness of 610 nm for 25 min of deposition. X‐ray diffraction analysis revels that the CuS thin films is polycrystalline in nature and the crystallite size is 29 nm. The peak at 612 cm−1 in the Fourier transform infrared spectroscopy spectra confirms the formation of CuS. The wettability study shows the hydrophilic nature, the contact angle of water with CuS electrode is 66°, and the charge transfer resistance of CuS electrode is 7.78 Ω.

Recent Developments in Electrodeposition of Transition Metal Chalcogenides‐Based Electrode Materials for Advance Supercapacitor Applications: A Review

“…In addition, the effects of various parameters controlling the electrochemical properties and morphology of the chalcogenides synthesized via the electrodeposition method were addressed. The table shows the potential activity of electrodeposited TMCs as compared to other electrode materials [75–97] …”

Electrodeposited Copper Tin Sulfide/Reduced Graphene Oxide Nanospikes for a High-Performance Supercapacitor Electrode

“…Such strategies include using a binder-free film deposition technique such as electrochemical deposition and forming a composite with carbon-based materials, notably graphene. Besides its simplicity, the electrochemical deposition method allows for binder-free, direct binding of the electroactive material on the conductive substrate enhancing the effective contact area between active materials and electrolytes, and the substrate thereby effectively reducing the impedance of the electrode for ion and electron transport (charge transfer) leading to the much improved electrochemical performance. − The performance of the pristine Cu 4 SnS 4 materials can also be enhanced by the formation of a composite with graphene. Studies have shown that incorporating reduced graphene oxide (rGO) with transition-metal sulfides has been shown to enhance their capacitive performance by a factor of more than ∼1.5 × (see Table S1).…”

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“…Researchers described that several deposition methods achieved the requirements of highly oriented thin film growth. These deposition methods such as aerosol assisted chemical vapour deposition [4], SILAR method, pulsed laser deposition [5], solvo thermal technique [6], electron beam evaporation technique [7], molecular beam epitaxy method [8], radio frequency sputtering technique [9], chemical bath deposition method [10][11][12], atomic layer deposition technique [13], spray pyrolysis method [14], and electro deposition method [15][16][17]. The obtained films could be employed in several applications including opto-electronic [18,19], solid state and medical devices [20].…”