Electrochemical synthesis of ZnO nanorods/porous silicon composites and their gas-sensing properties at room temperature

Nanosilicon-Based Composites for (Bio)sensing Applications: Current Status, Advantages, and Perspectives

“…), which play a crucial role for the effective detection of (bio)molecules. Mainly, MOx nanolayers/nanoparticles can be deposited over a nano-Si surface through the following techniques: (i) RF and DC magnetron sputtering [24,34,36,37,120,121,123,124,125,126]; (ii) sol–gel/hydrothermal synthesis + spin coating [17,26,127,128,129,130,131]; (iii) drop casting technique + pulsed laser ablation in liquid [132]; (iv) vapor–liquid–solid growth and chemical vapor deposition [25,40,133]; (v) catalytic immersion method [134]; and (vi) electrochemical and chemical deposition [35,122,135].…”

“…It has been ascertained that silicon/MOx nanocomposites are widely used for gas detection through the I–V curve characterization [136], resistance [24,34,35,37,39,120,121,122,124,125,126,129,131,133,135,137,138], and capacitance [25,40] measurements. Generally, the main gas sensing mechanism is based on oxygen adsorption on the nano-Si/ MOx surface, causing electron extraction from the conductive band of semiconductors.…”

“…It has been established that Au, Ag, Pd, and Pt nanoparticles deposited over silicon nanopillars or nanowires can be aggregated to “hot spots” and demonstrate a high enhancement factor in SERS-based biosensors with a detection limit less than 10 -12 M [33]. Furthermore, SiNWs and SiNPs in conjunction with metal oxides (TiO 2 , ZnO, WO 3 , F 2 O 3 , TeO 2 ) have shown promising results for gas and biomolecule detection via an electrochemical response with a detection limit of about 1 ppm [34,35,36,37,38]. Recently, a number of new composites have been developed based on SiNWs and SiNPs with sulfides (CdS, MoS 2 ) [39,40] and nitrides (Si 3 N 4 ) [41] that are suitable for sensitive light, humidity, and gas detection due to enhanced absorption and adsorption.…”

Gas Analisis System Based on the Porous Silicon Structures

“…Зокрема, інкорпорація в поруватий шар наночастинок паладію спри-яє підвищенню чутливості сенсорів до моле-кул водню та воднемістких сполук [6][7][8]. З ін-шого боку, використовуючи високу чутливість оксиду цинку до молекул оксиду азоту, етано-лу та метану [9][10][11] можна покращити селек-тивність сенсорів на основі ПК шляхом оса-дження наноструктур ZnO на поруватий шар. Таким чином, завдяки сприятливим каталітич-ним і адсорбційним властивостям нанокласте-ри паладію та оксиду цинку є перспективними кандидатами для їх впровадження у шар ПК.…”

In Situ Growth of ZnO inside a Porous Silicon Matrix Obtained by Electrochemical Etching with a Hydrofluoric Acid-Formaldehyde Solution

“…We believe that the functionalization of PS with ZnO paves the way for integrating ZnO into integrated circuits based on silicon [11]. To deposit ZnO particles on PS, different methods have been proposed such as radio frequency (RF) magnetron sputtering [12], sol-gel [13], plasma-assisted molecular beam epitaxy (PA-MBE) [14], and electrochemical deposition [15].…”