2016
DOI: 10.1016/j.matchemphys.2016.04.046
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Electrochemical synthesis of ZnTe thin films from citrate bath and their electrical properties with incorporation of Cu

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Cited by 12 publications
(6 citation statements)
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“…145 Cu-doped and undoped ZnTe films were developed on metal substrates using this technique, where the obtained electrical properties were altered by the incorporation of a dopant. 146…”
Section: Deposition Techniquesmentioning
confidence: 99%
See 1 more Smart Citation
“…145 Cu-doped and undoped ZnTe films were developed on metal substrates using this technique, where the obtained electrical properties were altered by the incorporation of a dopant. 146…”
Section: Deposition Techniquesmentioning
confidence: 99%
“…143 As stated, Hall measurements are also employed to investigate the electrical properties of ZnTe thin films. 146 Using the electrodeposition technique, ZnTe thin films were deposited at different bath temperatures (30–90 °C), where with an increase in bath temperature, the conductivity was found to increase due to the filling of a separate set of traps lying below the Fermi level. 196 Similarly, p- and n-type semiconducting layers were also prepared via the electrodeposition technique, followed by surface treatment employing CdCl 2 .…”
Section: Impact Of Doping and Post Treatment On Physical Propertiesmentioning
confidence: 99%
“…Secondary peaks (C2) began to appear at approximately -600 mV when the potential was moved in the negative direction (vs. Ag/AgCl sat. ), which corresponds to the formation of H 2 Te as given by (Kim et al, 2016) Te…”
Section: Mechanical Exfoliation Of Cu-te Thin Filmmentioning
confidence: 99%
“…PLD technology allows to precisely control the thickness of the film of the film, down to the atomic level, to form manganese-doped films by sequential deposition of two materials in this case, it was used as targets ZnTe and ZnTe: mn. Thus, by changing the layer thickness of each of them, it is possible to control the amount of impurities in the films [8]. In this research, zinc telluride films were grafted with manganese using PLD technique and optical and structural characterization of the pure and doped films were performed.…”
Section: Introductionmentioning
confidence: 99%