2007
DOI: 10.1016/s1452-3981(23)17102-1
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Electrochemically Deposited Nanograin Ruthenium Oxide as a Pseudocapacitive Electrode

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Cited by 90 publications
(2 citation statements)
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“…It is well known that RuO 2 has characteristics XRD peaks at 2θ = 30°, 35°. 78,79 No RuO x signal could be detected even on free Ru surface samples annealed at 600°C and 900°C in our samples. No direct oxidation of Ru at an elevated temperature in a furnace has been performed as RuO x was not planned for part of the manufactured layer system shown in Fig.…”
Section: Xrd Studies Of Layer Systems For Ru Devices a And Bmentioning
confidence: 55%
“…It is well known that RuO 2 has characteristics XRD peaks at 2θ = 30°, 35°. 78,79 No RuO x signal could be detected even on free Ru surface samples annealed at 600°C and 900°C in our samples. No direct oxidation of Ru at an elevated temperature in a furnace has been performed as RuO x was not planned for part of the manufactured layer system shown in Fig.…”
Section: Xrd Studies Of Layer Systems For Ru Devices a And Bmentioning
confidence: 55%
“…The area under the CV curve increases gradually with the increase in scan rate. The CV current is proportionate to the scan rate [32]. The specific capacitance was determined, ranging from 10 mV/s to 100 mV/s.…”
Section: The Electrochemical Studiesmentioning
confidence: 99%