Electrochemically superfilling of n-type ZnO nanorod arrays with p-type CuSCN semiconductor

n-ZnO nanorods/p-CuSCN heterojunction light-emitting diodes fabricated by electrochemical method

“…Compared with the ZnO nanorods LEDs without CuSCN, the n-ZnO nanorods/pCuSCN heterojunction LEDs show a much higher current growth rate, and relatively low threshold voltage of about 4 V. We attribute this phenomenon to a higher carrier mobility of ZnO/CuSCN heterostructure than that of ZnO nanorods only. The rectification ratios for our ITO/ZnO/CuSCN/Au device is 3, 14, and 20 for ±4, ±7, and ±10 V, respectively, lower than the reported result of ZnO/CuSCN heterojunction [25]. We attribute this to a relatively poor electrical contact between ZnO and CuSCN.…”

“…The current-voltage characteristics of the n-ZnO nanorods/pCuSCN heterojunction LEDs is investigated by modeling the semilogarithmic I-V plot (inset of Fig. 7(a)) with the ideal diode equation [25]:…”

“…Meanwhile it can be easily prepared by simple solution-based growth methods, which makes the cost of the device less expensive compared to high-energy consuming physical methods. Although p-type CuSCN as a good hole-transporting material has been used for photovoltaic devices [23,24] and employed to fabricate ZnO nanorods-based p-n heterojuctions [22,25,26] In this paper, we used simple electrochemical method to prepare both n-type ZnO nanorods and p-type CuSCN film at low-temperature and the following fabrication of a ZnO nanorods/CuSCN heterojunction LEDs. The photoluminescent (PL) properties and EL mechanism of our heterojunction LEDs were studied.…”

Influence of anneal atmosphere on ZnO-nanorod photoluminescent and morphological properties with self-powered photodetector performance

“…3 air-annealed ZnO is at least two orders of magnitude greater than those previously reported for ZnO/CuSCN diodes. 61,62 The increased leakage current for oxygen/nitrogen-annealed ZnO is attributed to the surface defects formed during the anneal process; these act as recombination sites or trap states at the ZnO/CuSCN interface.…”

Low temperature preparation p-CuI/n-ZnO wide gap heterojunction diode

“…3 exhibits a good rectifying behavior with a I F /I R ∼600 at 3 V indicating formation of a diode (I F and I R stand for the forward and reverse currents, respectively). The rectification ratio is better than the value (∼361 at ∼3 V) for the ZnO nanorods/nSi heterojunction observed by Huang et al [8], is better than that (∼154 at ∼2 V) observed by Wu et al [20] for the n-ZnO nanorods/pCuSCN heterojunction. This indicates that the electrical property of our p-CuI/n-ZnO heterojunction is comparable to the other junction made by more costly and sophisticated method.…”