Electrochemistry of bismuth interlayers in (Bi2)m(Bi2Te3)n superlattice

Abstract

Selective electrochemical transformations of bismuth interlayers in (Bi 2 ) m (Bi 2 Te 3 ) n superlattices can be of interest as a means of thermoelectric materials design based on bismuth telluride. In this work, the interlayers in the electrodeposited (Bi 2 ) m (Bi 2 Te 3 ) n superlattice structures formed by pulse potential controlled electrodeposition were characterized with electrochemical microgravimetry on quartz crystal electrodes, cyclic voltammetry, potentiodynamic electrochemical impedance spectroscopy (PDEIS), and in situ Raman spectroscopy. The oxidation potential of bismuth in the interlayers is in between the potentials of metallic bismuth and bismuth telluride anodic oxidation, which allows electrochemical detection and selective anodic dissolution of the interlayer bismuth. Microgravimetry and cyclic voltammetry have provided monitoring of bismuth interlayer dissolution and the subsequent underpotential deposition (upd) of bismuth adatoms onto Bi 2 Te 3 layers in the electrochemically created slits. PDEIS provided separate monitoring of the interfacial charge transfer, spatially restricted diffusion, capacitance of faradaic origin, and double-layer capacitance, which disclosed different variations of the electrochemical interface area in the superlattices with initial bismuth content below and above that of Bi 4 Te 3 . In situ Raman spectroscopy has monitored the removal of bismuth interlayers and distinguished different locations of Bi adatoms in two stages of Bi upd. The electrochemically created slits of molecular dimension have a potential of being used as sieves, e.g., to provide selective accessibility of the electrochemically created centers inside them to molecules and ions in multicomponent solutions.