2019
DOI: 10.1557/jmr.2019.61
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Electrode-induced lattice distortions in GaAs multi-quantum-dot arrays

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Cited by 4 publications
(2 citation statements)
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“…In our system, this is mostly caused by the surface electrodes, as GaAs and Al x Ga 1−x As are essentially lattice-matched for x = 0.3 (mismatch ∼ 4.26 × 10 −4 ). Independent work carried out using wafers and electrodes similar to our own measured a stress-induced tilt of the crystallographic planes of about 0.015 • , matching a stress of 57 MPa, and therefore corresponding to a maximum in-place strain of xx of ∼ 4 × 10 −5 [41,42]. It is important to highlight, however, that these measurements were carried out at room temperature, and that it is expected that the strain is reduced by up to factor of 2 when cooled down to cryogenic temperatures [43].…”
Section: Having Shown Our Technique To Work Successfully In 2dsupporting
confidence: 53%
“…In our system, this is mostly caused by the surface electrodes, as GaAs and Al x Ga 1−x As are essentially lattice-matched for x = 0.3 (mismatch ∼ 4.26 × 10 −4 ). Independent work carried out using wafers and electrodes similar to our own measured a stress-induced tilt of the crystallographic planes of about 0.015 • , matching a stress of 57 MPa, and therefore corresponding to a maximum in-place strain of xx of ∼ 4 × 10 −5 [41,42]. It is important to highlight, however, that these measurements were carried out at room temperature, and that it is expected that the strain is reduced by up to factor of 2 when cooled down to cryogenic temperatures [43].…”
Section: Having Shown Our Technique To Work Successfully In 2dsupporting
confidence: 53%
“…5a alone. For additional effects that could affect the value of m 0 , see [22] which includes [16,[49][50][51][52][53][54][55][56][57].…”
Section: Discussionmentioning
confidence: 99%