1999
DOI: 10.1016/s0927-0248(98)00172-x
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Electrodeposited CdS on CIS pn junctions

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Cited by 57 publications
(29 citation statements)
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“…These defects appear as deep and shallow level in the band gap of the elaborated semiconductors material. We note also that, the E g of the last film is less than the optimum value of the terrestrial solar spectrum and it is in good agreement with the results published in the literature [25,26]. The study of the electrical properties of these films is in progress.…”
Section: Resultssupporting
confidence: 90%
“…These defects appear as deep and shallow level in the band gap of the elaborated semiconductors material. We note also that, the E g of the last film is less than the optimum value of the terrestrial solar spectrum and it is in good agreement with the results published in the literature [25,26]. The study of the electrical properties of these films is in progress.…”
Section: Resultssupporting
confidence: 90%
“…In addition, as one makes thinner CdS films, the probability to make a short circuit between the CdTe layer and the front contact is increasing. In order to prepare transparent and high resistive CdS thin films with the good conformal coverage, there are various deposition techniques such as the chemical vapor deposition, the electro deposition [3], the spray method [4], the RF sputtering [5] and the chemical bath deposition [6][7][8][9]. So far, the chemical bath deposition (CBD) has been known to be the most promising method to fabricate the state of the art CdTe solar cell.…”
Section: Introductionmentioning
confidence: 99%
“…Many researchers have deposited CdS as window layer for the fabrication of solar cells [10], but major disadvantage of this layer is the lattice mismatch. This disadvantage leads to decrease the efficiency of solar cells.…”
Section: Introductionmentioning
confidence: 99%