2013
DOI: 10.1002/pip.2332
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Electrodeposited Cu2ZnSnSe4 thin film solar cell with 7% power conversion efficiency

Abstract: High performance Cu 2 ZnSnSe 4 (CZTSe) photovoltaic materials were synthesized by electrodeposition of metal stack precursors followed by selenization. A champion solar cell with 7.0% efficiency is demonstrated. This is the highest efficiency among all of the CZTSe solar cells prepared from electrodeposited metallic precursors reported to-date. Device parameters are discussed from the perspective of material microstructure and composition in order to improve performance. In addition, a high performance electro… Show more

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Cited by 153 publications
(113 citation statements)
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“…Solar cells with 5.5% and 7% efficiencies were reported with CZTS and CZTS/Se absorber layers developed by electrodeposition technique. 21,22 All these aforementioned results suggest a potential commercial interest behind sulfide/selenide based kesterite solar cells which need further optimization in the film synthesis and device fabrication steps to compete with established CdTe and CIGS technologies.…”
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confidence: 99%
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“…Solar cells with 5.5% and 7% efficiencies were reported with CZTS and CZTS/Se absorber layers developed by electrodeposition technique. 21,22 All these aforementioned results suggest a potential commercial interest behind sulfide/selenide based kesterite solar cells which need further optimization in the film synthesis and device fabrication steps to compete with established CdTe and CIGS technologies.…”
mentioning
confidence: 99%
“…[17][18][19][20][21][22] Among the vaccum based techniques, co-evaporated Cu 2 ZnSnSe 4 (CZTSe) and sputter deposited CZTS have attained device efficiencies of 9.15% and 9.3% respectively. 18,19 The films developed with chemical methods such as electrodeposition and nanoparticle based suspension are equally competent and economically attractive.…”
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confidence: 99%
“…1(e) and 1(f)). 16 From the top-down image in Fig. 1(c), the CZTSe layer on FTO is uniform and compact.…”
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confidence: 99%
“…2 shows the XRD pattern of selenized film which mostly exhibited the peaks related to the Kesterite structure of CZTSe (JCPDS 00-052-0868), without having any significant reflections for any other compounds except those associated with bottom Mo layer and MoSe 2 . 18,19 Here, dominant peak of polycrystalline CTZSe (112) lies at diffraction angle (2θ) 28.53…”
Section: Resultsmentioning
confidence: 99%
“…[18][19][20][21] MoSe 2 (JCPDS 29-0914) which usually forms at the interface between CZTSe and bottom Mo layer was observed at diffraction angles 31.2…”
Section: Resultsmentioning
confidence: 99%