Doping leading to low electrical resistivity in electrodeposited thin films of Cu 2 O is a straightforward requirement for the construction of efficient electronic and energy devices. Here, Bi (7 at. %) doped Cu 2 O layers were deposited electrochemically onto Si(100) single-crystal substrates from aqueous solutions containing bismuth nitrate and cupric sulfate. X-ray photoelectron spectroscopy shows that Bi ions in a Cu 2 O lattice have an oxidation valence of 3þ and glancing angle X-ray diffraction measurements indicated no presence of secondary phases. The reduction in the electrical resistivity from undoped to Bi-doped Cu 2 O is of 4 and 2 orders of magnitude for electrical measurements at 230 and 300 K, respectively. From variations in the lattice parameter and the refractive index, the electrical resistivity decrease is addressed to an increase in the density of Cu vacancies. Density functional theory (DFT) calculations supported the experimental findings. The DFT results showed that in a 6% Bi doped Cu 2 O cell, the formation of Cu vacancies is more favorable than in an undoped Cu 2 O one. Moreover, from DFT data was observed that there is an increase (decrease) of the Cu 2 O band gap (activation energy) for 6% Bi doping, which is consistent with the experimental results.