Electrodeposited ZnS Precursor Layer with Improved Electrooptical Properties for Efficient Cu2ZnSnS4 Thin-Film Solar Cells

Mkawi, E.M.; Ibrahim, Kamarulzaman; Ali, Majid Khan Majahar; Farrukh, Muhammad Akhyar; Mohamed, A. S.

doi:10.1007/s11664-015-3849-7

Cited by 11 publications

(5 citation statements)

References 20 publications

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“…And also revealed the value of resistivity is lower than carrier mobility which caused to increase the conductivity by reducing the recombination rate by allowing more charge carriers to diffuse to adjacent layer. It is reported the resistivity range of ZnS varied from 102 Ω.cm to 106 Ω.cm [11] .From this work and previous literature shown in Table 2 it is concluded that there is direct relationship between carrier concentration and resistivity which proves these both are in directly proportional to each other. It is concluded the increase in concentration will be able to excite maximum charge carriers from bulk, hence mobility of charge carriers will be increased.…”

Section: Results and Analysissupporting

confidence: 68%

Development of 2nd Generation Thin Film Photovoltaics Based on CZTS Absorber Layer and ZnS Window Layer

Tufail

Shah

Khan

et al. 2022

KEM

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Among the second-generation solar cells, thin-film solar cells based on CIGS, CZTS and CdTe are well known due to their higher efficiencies, low cost and simple fabrication techniques. In this proposed work, we are committed to developing CZTS and ZnS thin films for second-generation thin-film photovoltaics. CZTS and ZnS have energy band gap of 1.4-1.5 eV and 3.6 eV, while their light absorption coefficients are 104 cm-1 and 3.3×104 cm-1 respectively. In thin film solar cells, absorber layer consists of photovoltaic material that should have optimal bandgap close to 1.34 eV. Moreover, a wide band gap window layer acts as p-n junction with absorber layer. In this work, we are reporting the synthesis of CZTS and ZnS thin films via wet chemistry route using spin coating method. Deposition of thin films on SLG substrate were carried out at specific process parameters such as spinning speed, concentration of precursors and annealing temperature to get the optimized thin film suitable for photovoltaic applications. Surface morphology and elemental compositional analysis investigated through SEM and EDX spectroscopy respectively. Electrical and optical properties were examined via Hall effect measurements and UV-VIS NIR spectrophotometry respectively. In addition micro-chemical and functional group analysis were conducted by FRIT spectroscopy. Keywords: Thin film PV, wet-chemistry, CZTS, ZnS

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Section: Results and Analysissupporting

confidence: 68%

Development of 2nd Generation Thin Film Photovoltaics Based on CZTS Absorber Layer and ZnS Window Layer

Tufail

Shah

Khan

et al. 2022

KEM

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“…ZnS is an inexpensive semiconductor with an energy band gap of 3.72 eV in the cubic phase and 3.77 eV in the hexagonal wurtzite phase. In thin film photovoltaic devices, ZnS has been majorly employed as an n-type material to form a p-n junction by pairing with a p-type material, for example, Cu(In,Ga)Se 2 (CIGSe) [80] or Cu 2 ZnSnS 4 (CZTS) [81,82]. ZnS can be electrochemically deposited with either an alkaline electrolyte or an acidic electrolyte.…”

Section: Znsmentioning

confidence: 99%

“…ZnS can be electrochemically deposited with either an alkaline electrolyte or an acidic electrolyte. Mkawi et al reported the use of an aqueous electrolyte containing zinc sulfate (ZnSO 4 ), thiourea (CS(NH 2 ) 2 ) and ammonia (NH 3 ) for the deposition of ZnS on ITO-coated glass substrate [82]. The pH value of the electrolyte was 10 and the deposition was carried out at 80 • C. It was explained that NH 3 functioning as a complexing agent formed a complex with Zn and thus played a role in controlling the concentration of Zn 2+ through the common ion effect.…”

Section: Znsmentioning

confidence: 99%

“…H2SeO3 can be prepared by dissolving SeO2 in water [91,92]. Since H2SeO3 may oxidize readily, the deposition is Regardless of the use of an alkaline or acidic electrolyte, in most of cases the as-deposited ZnS is either an amorphous structure or possesses a cubic phase [82,84,86]. Annealing at a temperature above 200 • C may promote the crystallization and enable the formation of a hexagonal phase of ZnS [87].…”

Section: Znsementioning

confidence: 99%

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Electrodeposition Fabrication of Chalcogenide Thin Films for Photovoltaic Applications

et al. 2020

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Electrodeposition, which features low cost, easy scale-up, good control in the composition and great flexible substrate compatibility, is a favorable technique for producing thin films. This paper reviews the use of the electrodeposition technique for the fabrication of several representative chalcogenides that have been widely used in photovoltaic devices. The review focuses on narrating the mechanisms for the formation of films and the key factors that affect the morphology, composition, crystal structure and electric and photovoltaic properties of the films. The review ends with a remark section addressing some of the key issues in the electrodeposition method towards creating high quality chalcogenide films.

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“…The resistivity seems to vary between 18.4 to 0.63 Ωcm when the precursor for the copper atom is changed. Mkawi reported a lower resistivity value of 6.98 Ωcm for a copper concentration of 0.4 M [59]. The resistivity value is found to depend on carrier concentration and mobility.…”

Section: Electrical Analysismentioning

confidence: 89%

Optimization of the optoelectronic properties of copper zinc tin sulfide thin films for solar photovoltaic applications

Gunavathy¹,

Arulanantham²,

Khan³

et al. 2021

Phys. Scr.

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Copper Zinc Tin Sulfide (CZTS), a successful contender for environmentallybenign thin film photovoltaics was successfully prepared on soda-lime glass substrates through an economically feasible nebulizer assisted spray pyrolysis technique. Further, a solar cell structure withn-CdS/p-CZTSheterojunction was fabricated to study the performance of the nebulizer sprayed CZTS absorber layer using different precursor solutions for copper such as copper acetate, copper chloride, and copper nitrate. Investigations were done to ascertain the influence of different copper precursors on the optoelectronic properties of CZTS thin films by systematically analyzing their characteristics determined by using different analytical techniques. X-ray diffraction studies show a preferential orientation along (112) plane for the deposited kesterite film. The obtained film thickness and crystallite size were found to be 507 nm and 8 nm, respectively, for the film derived from copper nitrate based spray solution. AFM morphological analysis also confirmed a higher particle size for copper nitrate based CZTS film whose band gap was found to be 1.50 eV. The absorption characteristic was also in the favor of nitrate form of the copper precursor which shows a higher absorption value in the visible region than the rest of the samples. Its carrier concentration was found to be 8.06×10 17 cm −3 which is 4 times higher than the rest of the films and mobility was found to be of the order of 12.3 cm 2 V −1 s −1 . The open circuit voltage, short circuit current, fill factor, and efficiency of copper nitrate based CZTS solar cell structure was found to be better and is determined to be 0.27 V, 2.51 mA cm −2 , 24.3%, and 0.165%.

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Electrodeposited ZnS Precursor Layer with Improved Electrooptical Properties for Efficient Cu2ZnSnS4 Thin-Film Solar Cells

Cited by 11 publications

References 20 publications

Development of 2nd Generation Thin Film Photovoltaics Based on CZTS Absorber Layer and ZnS Window Layer

Development of 2nd Generation Thin Film Photovoltaics Based on CZTS Absorber Layer and ZnS Window Layer

Electrodeposition Fabrication of Chalcogenide Thin Films for Photovoltaic Applications

Optimization of the optoelectronic properties of copper zinc tin sulfide thin films for solar photovoltaic applications

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