2016
DOI: 10.1016/j.electacta.2016.03.048
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Electrodeposition and selenization of brass/tin/germanium multilayers for Cu2Zn(Sn1-xGex)Se4 thin film photovoltaic devices

Abstract: A B S T R A C TDense, closed, homogeneous brass/tin/germanium multilayers have been prepared by electrochemical methods. The stacks were electrodeposited on molybdenum-sputtered soda-lime glass. Brass was deposited first from an aqueous pyrophosphate electrolyte. Then, tin was deposited from a tin(II) pyrophosphate electrolyte. Germanium was deposited as the top film from 5 vol% GeCl 4 in propylene glycol. The composition of the brass/tin/germanium stack could easily be controlled by adjustment of the charge o… Show more

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Cited by 13 publications
(13 citation statements)
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“…To electrodeposit Ge thin films in aqueous or nonaqueous electrolytes is extremely difficult, because of the poor solubility of Ge-based salts and/or harsh electrodeposition conditions. 27,28 Therefore, it is inadvisable to obtain Ge films through the electrodeposition process. Furthermore, Ge is generally introduced by thermal evaporation, magnetron sputtering, or an organic solvent-based solution process, but with high-standard equipment and under rigorous conditions.…”
Section: Resultsmentioning
confidence: 99%
“…To electrodeposit Ge thin films in aqueous or nonaqueous electrolytes is extremely difficult, because of the poor solubility of Ge-based salts and/or harsh electrodeposition conditions. 27,28 Therefore, it is inadvisable to obtain Ge films through the electrodeposition process. Furthermore, Ge is generally introduced by thermal evaporation, magnetron sputtering, or an organic solvent-based solution process, but with high-standard equipment and under rigorous conditions.…”
Section: Resultsmentioning
confidence: 99%
“…In past years, many efforts have been taken to investigate the influence of Ge‐incorporation on the device performance of kesterite thin film solar cells . In 2012, Guo et al obtained an 8.4%‐efficient CZTGeSSe solar cell with Ge/(Ge+Sn) = 0.17 by a nanoparticle based method with Ge contained precursor .…”
Section: Optimizing the Bandgap Of Absorber And Engineering Its Bandgmentioning
confidence: 99%
“…Extensive studies on Cu 2 Zn(Sn 1– x Ge x )Se 4 thin films were also conducted by other methods, such as electrochemical deposition (ED), pulse laser deposition (PLD), hot injection, and chemical spray pyrolysis . The bandgap of Cu 2 Zn(Sn 1– x Ge x )(S,Se) 4 thin film can be tuned by controlling the ratio of Ge/(Ge+Sn) in the precursors.…”
Section: Optimizing the Bandgap Of Absorber And Engineering Its Bandgmentioning
confidence: 99%
“…The synthesis of Ge-alloyed kesterite films has also been explored for higher bandgap using multilayer electrodeposition [102]. In this work brass/tin/germanium stacks were prepared, using pyrophosphate electrolytes for brass and tin electrodeposition and an organic electrolyte for Ge electrodeposition.…”
Section: Multiple Layer Depositionmentioning
confidence: 99%