2017
DOI: 10.1149/2.0171708jes
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Electrodeposition of Continuous Silicon Coatings from the KF-KCl-K2SiF6Melts

Abstract: The silicon electrodeposition from the KF-KCl-(10 mol%) K2SiF6 melt at 943–1103 K has been studied. The polycrystalline continuous single-phase silicon coatings (∼99.9 wt% Si) have been obtained on the graphite, glassy carbon, silver, and tungsten substrates. The Raman spectroscopic study of the Si/C and Si/Ag interfaces has proved an absence of the intermediate phases. Two phases (Si and Ni2Si) were formed during the silicon electrodeposition on nickel.

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Cited by 35 publications
(22 citation statements)
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“…Moreover, owing to the low solubilities of LiF and NaF in water, it is difficult to remove the adhered salt from the electrodeposited silicon films. [23] Recently, a water soluble KCl-KF salt was employed to prepare a thick (more than 50 µm) silicon film or silicon coatings by electrodeposition, [24][25][26][27] yet no photoresponse has been demonstrated. Since the solubility of K 2 SiF 6 in KCl-KF at 650 °C is much higher than that of SiO 2 in CaCl 2 at 850 °C, in the present study the feasibility of preparing a thick (>10 µm) and dense silicon film with photoactivity on a sheet substrate in KCl-KF-K 2 SiF 6 bath was investigated and a successful formulation was discovered.…”
mentioning
confidence: 99%
“…Moreover, owing to the low solubilities of LiF and NaF in water, it is difficult to remove the adhered salt from the electrodeposited silicon films. [23] Recently, a water soluble KCl-KF salt was employed to prepare a thick (more than 50 µm) silicon film or silicon coatings by electrodeposition, [24][25][26][27] yet no photoresponse has been demonstrated. Since the solubility of K 2 SiF 6 in KCl-KF at 650 °C is much higher than that of SiO 2 in CaCl 2 at 850 °C, in the present study the feasibility of preparing a thick (>10 µm) and dense silicon film with photoactivity on a sheet substrate in KCl-KF-K 2 SiF 6 bath was investigated and a successful formulation was discovered.…”
mentioning
confidence: 99%
“…38 In general, this pattern is similar to the Raman spectrum of a continuous Si coating on C obtained in our earlier work. 17 The main differences are in the shift of the strong band from the typical value for bulk crystalline Si (519 cm -1 ) to 511 cm -1 and the expansion of its left flank towards the value typical for amorphous Si (480 cm -1 ). 39 The same was observed in the Raman spectra of the Al-doped Si films obtained by radio-frequency magnetron sputtering, which did not have a well-crystallized structure.…”
Section: Accepted Manuscriptmentioning
confidence: 96%
“…The strong first-order Raman peak with a maximum at 511 cm -1 and two second-order bands at 300 and 940-1000 cm -1 can be attributed to the silicon vibrations. 17,37 In the high-frequency range, the spectrum contains two characteristic peaks at about 1330 and 1580 cm -1 , which correspond to the main carbon bands. 38 In general, this pattern is similar to the Raman spectrum of a continuous Si coating on C obtained in our earlier work.…”
Section: Accepted Manuscriptmentioning
confidence: 99%
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