Electrodeposition of Indium Antimonide Nanowires in Porous Anodic Alumina Membranes

Mohammad, Asaduzzaman; Das, Suprem R.; Chen, Yong P.; Sands, T.; Janes, David B.

doi:10.1109/ugim.2010.5508899

Cited by 2 publications

(2 citation statements)

References 12 publications

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“…The TO mode at 178 cm −1 with a full width at half maximum (FWHM) of about 10 cm −1 has a very small frequency shift compared to the bulk TO mode [22] at 180 cm −1 . Similarly, the LO mode for the InSb nanowires is at 188 cm −1 with a FWHM of about 6 cm −1 , a shift of about 5 cm −1 compared to the corresponding LO mode [30] in bulk materials at 193 cm −1 . The observation of the two distinct peaks for the TO and LO modes of phonon vibration in the InSb nanowire sample as well as the fact that the FWHM of the TO and LO lines is 10 cm −1 attests to the high crystalline quality of the InSb nanowires [31].…”

Section: Resultsmentioning

confidence: 85%

Synthesis of metallic, semiconducting, and semi-metallic nanowires through control of InSb growth parameters

Sapkota¹,

Philipose²

2014

Semicond. Sci. Technol.

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In this work we present a simple route to grow metallic, semiconducting or semi-metallic nanowires by chemical vapor deposition. Metallic indium (In), semiconducting indium antimonide (InSb) and semi-metallic antimony (Sb) nanowires were successfully synthesized by controlling temperature and hence Sb vapor pressure in the higher eutectic region of the InSb phase diagram. Semiconducting InSb nanowires were synthesized by direct antimonidization of In droplets at a temperature of 480 • C in an Sb-rich environment. I-V measurements on a single 50 nm thick InSb nanowire field-effect transistor show electrons to be the majority carriers with an electron concentration of ≈10 18 cm −3 . Thermally activated Arrhenius conduction was observed in the temperature range from 200-325 K, yielding an activation energy of 0.11 eV. Metallic In nanowires were grown at 600 • C, using a process similar to that for the growth of InSb nanowires. However, the higher growth temperature resulted in Sb re-evaporating from the growing nanowire crystal, leading to growth of In nanowires. The In nanowires were found to have an extremely high (≈10 21 cm −3 ) electron concentration. Temperature dependent conductivity measurements show that at high temperatures the In nanowire conductivity varies as T −3/2 , suggesting that acoustic phonons controlled electron transport. Antimony nanowire growth occurred at 400 • C by a self-catalyzed growth mechanism. Electron transport measurements on a single Sb nanowire reveal p-type conduction, with a hole concentration of ≈10 19 cm −3 . A higher hole mobility compared to electron mobility and the presence of surface states is the most likely cause of the hole-dominated conductivity in the Sb nanowires.

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Section: Resultsmentioning

confidence: 85%

Synthesis of metallic, semiconducting, and semi-metallic nanowires through control of InSb growth parameters

Sapkota¹,

Philipose²

2014

Semicond. Sci. Technol.

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“…During this room-temperature electrodeposition process, the citrate ions were used as complexing agents to bring the deposition potential of In and Sb closer to maintain a binary growth of InSb nanowires. 1,42,43 On completion of the deposition process the AAO template was carefully removed from the electrodeposition cell, rinsed several times with DI water, and removed from copper tape for further processing by soaking in acetone for removal of the protective polymer. The nanowires were then extracted by dissolving the AAO template in 1 M KOH.…”

Section: Methodsmentioning

confidence: 99%

Template-Assisted Electrochemical Synthesis of p-Type InSb Nanowires

Singh

Algarni

Philipose

2017

ECS J. Solid State Sci. Technol.

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We report on the growth of Sb-rich indium antimonide (InSb) nanowires fabricated by dc electrodeposition in the pores of a goldcoated nanoporous anodic alumina oxide (AAO) template. An explanation of the various mechanisms of mass transport during successive stages of the growth process is also presented with experimental results confirming these growth stages. The 100 nm thick InSb nanowires that were grown using an electrolyte of pH 1.7 were found to be rich in antimony (Sb). The electrical properties of a single InSb nanowire was investigated by connecting the nanowire in a field-effect-transistor type configuration. The nanowires showed p-type conduction with a hole concentration of ∼1.9 × 10 16 cm −3 and field effect hole mobility of ∼507 cm 2 V −1 s −1 . The device had a high on-off current ratio of the order of 10 3 . Temperature-dependent transport measurements showed thermally activated Arrhenius conduction in the temperature range from 200-325 K, yielding an activation energy of 0.1 eV. The ability to obtain high density of p-type InSb nanowires without addition of any dopants opens up new opportunities for using these nanowires in fabrication of electronic devices.In recent years, there has been increasing interest in nanostructured III-V semiconducting materials due to their potential applications in electronic and optoelectronic devices. 1 Of these, indium antimonide (InSb) with a direct bandgap of 0.17 eV at 300 K is extremely promising since it has high electron and hole mobility 2,3 of 77000 cm 2 V −1 s −1 , and 850 cm 2 V −1 s −1 respectively. With a small electron effective mass of 0.014, 2,4 and large Lande g-factor of 51, 4,5 InSb is a material of choice for use in high-speed electronic devices, low-power logic transistors, 6,7 nanowire field effect transistors (FETs), 8-10 infrared (IR) nano-optoelectronics, 11-13 thermoelectrics, 14-18 and magnetoresistive sensors. 19 Among various techniques such as chemical vapor deposition (CVD) 20 and molecular beam epitaxy (MBE) 21 used to synthesize nanowires, electrodeposition in nanoporous anodic alumina oxide (AAO) template is a relatively inexpensive and versatile method that can be performed at room temperature. This low-temperature growth technique is preferred for growth of compound semiconductors like InSb where the difference in vapor pressures between In and Sb can result in non-stoichiometric growth at high temperatures. The technique is especially desirable for growing heterostructures since it prevents heat-induced inter-diffusion of elements across adjacent layers in the heterostructure. Another advantage is the possibility that the nanowire can be doped during the electrodeposition process, thus making it the method of choice for synthesis of nanostructured materials at low cost.In recent years, electrochemical growth of nanowires in AAO templates has received much attention. AAO is a self-organized nanostructured material containing a high density of uniform cylindrical pores that are aligned perpendicular to the surface and penetrates ...

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Electrodeposition of Indium Antimonide Nanowires in Porous Anodic Alumina Membranes

Cited by 2 publications

References 12 publications

Synthesis of metallic, semiconducting, and semi-metallic nanowires through control of InSb growth parameters

Synthesis of metallic, semiconducting, and semi-metallic nanowires through control of InSb growth parameters

Template-Assisted Electrochemical Synthesis of p-Type InSb Nanowires

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