Electrodeposition of p–i–n type CuInSe2 multilayers for photovoltaic applications

Chaure, Nandu B.; Young, James S.; Samantilleke, A. P.; Dharmadasa, I. M.

doi:10.1016/j.solmat.2003.10.001

Cited by 84 publications

(51 citation statements)

References 6 publications

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“…5. The value of energy band gap was estimated to be *1.05 eV which is close to the reported value of CISe [10]. SEM images of as-prepared and selenized Cu-In thin film are shown in Fig.…”

Section: Resultssupporting

confidence: 82%

“…4. Three most prominent peaks, (112), (204/220) and (312/116) of tetragonal structure of CISe are attributed in the XRD results [19,10]. Peaks related to FTO are marked as solid circle (d).…”

Section: Methodsmentioning

confidence: 99%

“…Various methods have been used for the deposition of CISe and CIS thin films such as, molecular beam epitaxy [4], chemical bath deposition [5], physical vapor deposition [6], spray pyrolysis [7], sputtering [8,9], electrodeposition [10] etc. Among these techniques an electrodeposition (ED) is one of the low-cost techniques with numerous advantages, become the promising method for preparation of photovoltaic solar cells [10,11]. Generally, two procedures have been adopted to deposit CISe/CIS thin films; one-step codeposition of all elements in a single bath and selenization or sulphurization of Cu-In alloy thin films.…”

Section: Introductionmentioning

confidence: 99%

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Selenization of electrodeposited copper–indium alloy thin films for solar cell applications

Londhe

Rohom

Chaure

2014

J Mater Sci: Mater Electron

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Copper-Indium (Cu-In) alloys with sulfur and selenium have technological importance in the development of thin film solar cell technology. We have used potentiostatic electrochemical technique with three-electrode geometry for the deposition of Cu-In alloy thin films in an aqueous electrolyte. Cathodic voltammetry (CV) was thoroughly studied to optimize the electrodeposition parameters. The deposition potential for Cu-In alloy was found to be in the range -0.70 to -0.85 V versus Ag/AgCl reference electrode. Polycrystalline Cu x In y thin films were electrodeposited from aqueous bath at room temperature and 45°C. Effect of concentration of citric acid was extensively studied by CV measurements. The as-deposited Cu-In films were characterized with a range of characterization techniques to study the structural, morphological, compositional and electrical properties. Thin layers of CuIn were selenized in a homemade tubular furnace at 400°C, which reveals the formation of polycrystalline CuInSe 2 (CISe) thin films with tetragonal structure. The band gap of CISe thin film was estimated *1.05 eV by optical absorption spectroscopy. Nearly stoichiometric CISe thin film, Cu = 25.25 %, In = 26.48 % and Se = 48.27 % was obtained after selenization. The linear behavior of current density-voltage (J-V) was observed for Cu-In alloy thin films whereas, the selenized Cu-In alloy films (CISe) possess rectifying properties.

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“…5. The value of energy band gap was estimated to be *1.05 eV which is close to the reported value of CISe [10]. SEM images of as-prepared and selenized Cu-In thin film are shown in Fig.…”

Section: Resultssupporting

confidence: 82%

Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Selenization of electrodeposited copper–indium alloy thin films for solar cell applications

Londhe

Rohom

Chaure

2014

J Mater Sci: Mater Electron

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“…Without any complexing agents and supporting electrolytes, Chaure et al reported the possibility to electrodeposit CISe (p, i, and n-type) [67] and CIGSe (p + , p, i, n, and n + ) [68] by varying the deposition potential from the same bath. The major hindrance in using the aqueous electrolytes is the abrupt changes in the (Ga/III) ratio, as even for a slight change in the deposition, potential can alter the composition and thus the deposition mechanism [69].…”

Section: Experimental Concerns In Cigse Electrodepositionmentioning

confidence: 99%

A short review on the advancements in electroplating of CuInGaSe2 thin films

Chandran

Panda

Mallik

2018

Mater Renew Sustain Energy

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Thin-film solar cell devices based on copper indium gallium diselenide (CIGSe) chalcogenide materials fabricated by vacuum-based deposition techniques have already achieved lab scale efficiency beyond 21%. For industrial-scale applications, non-vacuum deposition technique such as electrodeposition and screen printing is considered to be suitable approaches for reducing the device fabrication cost. Moreover, electrodeposition has the potential to prepare large area thin films as it requires cheap raw material sources and equipment capital. Hence, it is imperative to understand the current status and advancements in the electroplating techniques of the CIGSe thin films. This article reviews on the experimental advances in electroplating of ternary CuInSe 2 and quaternary CIGSe. Various approaches in electrodeposition, influential experimental parameters, and the deposition mechanisms which are related to the final cell efficiency are discussed in detail.

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“…At present, photovoltaic power generation materials applied in solar cells include the following: simple substance materials such as silicon, polysilicon, amorphous silicon, and compounds such as GaAs, CdS, CuInSe 2 and so on [1,2]. However, the corresponding photovoltaic products have various problems such as cost, pollution, mass production, efficiency etc when used for solar energy conversion devices.…”

Section: Introductionmentioning

confidence: 99%

Preparation and Performance Research of CuInSe<sub>2</sub> Materials Applied in Solar Cell

Wang¹,

Zhang²,

Deng³

et al. 2012

JCPT

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At present, CuInSe 2 (referred to as CIS) semiconductor has become one of the hot points in solar cell field at home and abroad for its excellent performances, such as direct bandgap, high light absorption coefficient, high photoelectric conversion efficiency and long-term stability. In this paper, the CIS bulk materials are prepared by the horizontal Bridgman method with double-heat sources, the crystal structure, microstructure morphology and composition of the samples are analyzed in X-ray diffraction instrument (XRD) and scanning electronic microscope (SEM) with Energy Dispersive X-ray Spectrum (EDX), and surface electrical state and electrical properties of the samples are characterized in X-ray photoelectron spectroscopy (XPS) and four point resistivity test system. The results show that the CIS crystal was grown, and that the conductive performance of the samples is good which display the characteristics of p-type semiconductor. Furthermore, a thin film CIS sample was obtained by argon ion-beam scanning bombardment, and it has high solar energy absorptivity and the bandgap of 0.99 eV analyzed in Ultraviolet-visible Spectrum that is suitable for solar cell.

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Electrodeposition of p–i–n type CuInSe2 multilayers for photovoltaic applications

Cited by 84 publications

References 6 publications

Selenization of electrodeposited copper–indium alloy thin films for solar cell applications

Selenization of electrodeposited copper–indium alloy thin films for solar cell applications

A short review on the advancements in electroplating of CuInGaSe2 thin films

Preparation and Performance Research of CuInSe<sub>2</sub> Materials Applied in Solar Cell

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Electrodeposition of p–i–n type CuInSe2 multilayers for photovoltaic applications

Cited by 84 publications

References 6 publications

Selenization of electrodeposited copper–indium alloy thin films for solar cell applications

Selenization of electrodeposited copper–indium alloy thin films for solar cell applications

A short review on the advancements in electroplating of CuInGaSe2 thin films

Preparation and Performance Research of CuInSe&lt;sub&gt;2&lt;/sub&gt; Materials Applied in Solar Cell

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Preparation and Performance Research of CuInSe<sub>2</sub> Materials Applied in Solar Cell