Copper tin sulfide (Cu 2 SnS 3 ) thin films were grown by a two-stage process of sequential deposition of precursor layers CuS and SnS by chemical bath deposition technique followed by annealing in sulfur atmosphere. Two stacks of SnS-CuS thin films were prepared in which SnS thickness alone was varied keeping CuS film thickness fixed in an attempt to optimize SnS layer thickness to obtain Cu 2 SnS 3 (CTS). The annealed films were characterized by studying their structural, microstructural and optical properties. X-ray diffraction analysis of the films obtained by annealing stack S-I revealed that they are multi-phase containing Cu 2 SnS 3 and the secondary phases, Sn 2 Sn 3 and Snrich CTS phase Cu 2 Sn 3 S 7 . Films obtained on annealing stack S-II resulted in monoclinic CTS phase with minor Cu 2 Sn 3 S 7 , tetragonal/cubic CTS phases. The direct optical band gap of monoclinic CTS phase is found to be 0.82 eV.