2014
DOI: 10.1016/j.electacta.2014.02.049
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Electrodeposition of ZnO Nanorod Arrays on Transparent Conducting Substrates–a Review

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Cited by 216 publications
(174 citation statements)
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“…Furthermore, ultrasonication induced the condensation of Zn(OH) 2 into ZnO nanocrystals according to (4). is process took part homogeneously in all the volume of reaction forming spherical ZnO NPs when the concentration of the zinc precursor was low, for example, 0.02 or 0.05 M. It was reported that the presence of Zn(OH) 2 is a key factor for the growth of ZnO nanocrystals into hexagonal nanorods by adding Zn(OH) x complexes onto positively charged, Zn-terminated (0001) planes [22][23][24]. Similarly, when the concentration of the zinc precursor increased to 0.1 M, free Zn(OH) 2 reacted with preformed spherical ZnO nanocrystals producing hexagonal rod-like structures as seen in Figure 2(a).…”
Section: Resultsmentioning
confidence: 99%
“…Furthermore, ultrasonication induced the condensation of Zn(OH) 2 into ZnO nanocrystals according to (4). is process took part homogeneously in all the volume of reaction forming spherical ZnO NPs when the concentration of the zinc precursor was low, for example, 0.02 or 0.05 M. It was reported that the presence of Zn(OH) 2 is a key factor for the growth of ZnO nanocrystals into hexagonal nanorods by adding Zn(OH) x complexes onto positively charged, Zn-terminated (0001) planes [22][23][24]. Similarly, when the concentration of the zinc precursor increased to 0.1 M, free Zn(OH) 2 reacted with preformed spherical ZnO nanocrystals producing hexagonal rod-like structures as seen in Figure 2(a).…”
Section: Resultsmentioning
confidence: 99%
“…Оксид цинка является перспективным материалом оптоэлектроники и электроники, в том числе фото-вольтаики и сенсорики, благодаря уникальному со-четанию таких свойств, как широкая запрещенная зона (E g = 3.37 эВ), большая энергия связи эксито-на (60 мэВ), доступность, дешевизна и биосовмести-мость [1][2][3][4][5][6][7]. Особенностью ZnO является возможность его синтеза с использованием большого количества пригодных для массового производства методов с целью создания самых разнообразных наноструктур, облада-ющих уникальными свойствами.…”
Section: Introductionunclassified
“…The reason is not only in the unique properties of this wide bandgap semiconductor (Eg = 3.37 eV) with direct optical transitions and a large exciton binding energy (60 MeV at the room temperature), but also in the possibility of obtaining ZnO using different technologies, including inexpensive and suitable for large-scale production of liquid-phase chemical and electrochemical methods [2][3][4][5][6][7][8][9][10] . The another advantage of the material ZnO is its propensity to form nanostructures with different morphology among which the greatest interest for the developers of electronic products and optoelectronics attract nanowires and nanorods, i.e., one-dimensional (1-D) nanostructures of zinc oxide.…”
Section: Introductionmentioning
confidence: 99%
“…Zinc oxide (ZnO) belongs to the rapidly developing class of materials used for electronic and optoelectronic applications [1][2][3][4][5][6][7][8][9] . The reason is not only in the unique properties of this wide bandgap semiconductor (Eg = 3.37 eV) with direct optical transitions and a large exciton binding energy (60 MeV at the room temperature), but also in the possibility of obtaining ZnO using different technologies, including inexpensive and suitable for large-scale production of liquid-phase chemical and electrochemical methods [2][3][4][5][6][7][8][9][10] .…”
Section: Introductionmentioning
confidence: 99%