Electrodes for wide-bandwidth substrate-removed electro-optic modulators

Dogru, Selim; Shin, Jaehyun; Dagli, N.

doi:10.1364/ol.38.000914

Cited by 6 publications

(3 citation statements)

References 8 publications

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“…This is mainly due to large device capacitance and the excessive resistance of p-layer. This difficulty can be solved using a so called staircase waveguide and an n-i-p-i-n epilayer design [16], [17]. Modulator electrodes fabricated this way demonstrated that modulation bandwidth in excess of 35 GHz is possible for 2-mm-long electrodes.…”

Section: Device Fabricationmentioning

confidence: 99%

Ultralow Drive Voltage Substrate Removed GaAs/AlGaAs Electro-Optic Modulators at 1550 nm

Shin

Dagli

2013

IEEE J. Select. Topics Quantum Electron.

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Section: Device Fabricationmentioning

confidence: 99%

Ultralow Drive Voltage Substrate Removed GaAs/AlGaAs Electro-Optic Modulators at 1550 nm

Shin

Dagli

2013

IEEE J. Select. Topics Quantum Electron.

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“…Fig. 3 shows the traveling wave electrode design utilizing loaded line approach [10], [11]. Unloaded part of the electrode is a coplanar transmission line on thick BCB over the transfer substrate.…”

Section: Traveling Wave Modulator Designsmentioning

confidence: 99%

Traveling Wave Electrodes for Substrate Removed Electro-Optic Modulators With Buried Doped Semiconductor Electrodes

Dogru

Shin

Dagli

2013

IEEE J. Quantum Electron.

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This paper reports theoretical and experimental studies of traveling wave electrodes suitable for wide bandwidth operation of ultra-low voltage substrate removed compound semiconductor electro-optic modulators. These modulators use submicron epitaxial layers removed from their substrates and contain buried electrodes made out of doped semiconductors. This approach enables very uniform submicron electrode gap resulting in ultra-low voltage operation. Traveling wave electrodes suitable for wide bandwidth and low voltage operation are designed using loaded line approach. Electrode capacitance and resistance are reduced significantly using staircase waveguides and n-i-p-i-n epitaxial layer designs. A very accurate modeling of the electrode is introduced. Such electrodes are fabricated and characterized up to 35 GHz. Experimental and modeling results are found to agree very well, making the design of such electrodes possible. Theoretical and experimental results show that subvolt modulators with electrical to optical bandwidths in excess of 35 GHz are possible.

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“…We also made 2 V V π modulators with 1.8 mm long electrodes at 1.55 μm in InP using multi quantum well (MQW) cores [8]. Recently, we also published modulator designs with traveling wave electrodes suitable for wide bandwidth operation [9], [10]. All of this study is based on substrate removal technology in compound semiconductors.…”

mentioning

confidence: 99%

0.2 V Drive Voltage Substrate Removed Electro-Optic Mach–Zehnder Modulators With MQW Cores at 1.55 μm

Dogru

Dagli

2014

J. Lightwave Technol.

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Novel electro-optic modulators in compound semiconductor epilayers using substrate removal techniques are reported. Epilayer consists of a p-i-n junction in which i layer is composed of an InGaAlAs/InAlAs MQW. This creates an optical mode with very strong vertical confinement and overlapping very well with the large electric field of the reverse biased p-i-n junction. This approach combined with the large quadratic electro-optic coefficient due to MQW improves efficiency of modulation significantly. Mach-Zehnder electro-optic modulators fabricated using this approach has 0.2 V (0.6 V) V π for 3 (1) mm long electrodes at 1.55 μm under push pull drive corresponding to record modulation efficiency of 0.06 V•cm. Index Terms-Compound semiconductor modulators, integrated optics, optical modulators. I. INTRODUCTIONO PTICAL modulator is a key component for a wide range of applications requiring electrical to optical conversion. These include fiber optic communications, RF photonics, optical signal processing and instrumentation. Electro-optic modulators are among the most commonly used modulator types. One of the key metrics for an electro-optic modulator is the drive voltage needed to switch the modulator from on to off state or vice versa. This parameter is also known as V π . Electrical power required to turn the modulator on and off is proportional to the square of this parameter. Clearly a low V π modulator is needed to reduce electrical power consumption. Electro-optic modulators are fabricated in different material platforms such as LiNbO 3 [1], [2], polymer [3] and compound semiconductors [4]. Such modulators typically have V π values of about a few volts and higher. Presently most commonly used electro-optic modulators are made in LiNbO 3 . They have low frequency V π of around 3 V with bandwidths around 20 GHz. This value increases with frequency and bandwidth. In an electro-optic modulator, there is a tradeoff between V π and bandwidth. There are reports of very wide bandwidth LiNbO 3 modulators approaching 100 GHz [1]. But these devices have V π of about 10 V. High V π values Manuscript

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Electrodes for wide-bandwidth substrate-removed electro-optic modulators

Cited by 6 publications

References 8 publications

Ultralow Drive Voltage Substrate Removed GaAs/AlGaAs Electro-Optic Modulators at 1550 nm

Ultralow Drive Voltage Substrate Removed GaAs/AlGaAs Electro-Optic Modulators at 1550 nm

Traveling Wave Electrodes for Substrate Removed Electro-Optic Modulators With Buried Doped Semiconductor Electrodes

0.2 V Drive Voltage Substrate Removed Electro-Optic Mach–Zehnder Modulators With MQW Cores at 1.55 μm

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