We investigate dc resistivity and Hall effect of the quasi-two-dimensional organic materials κ-(ET)2X where X = Ag2(CN)3 and B(CN)4 and compare them with the results for X = Cu2(CN)3. All three compounds are considered to be quantum spin disordered Mott insulators. Despite high similarities in chemical composition and crystal structure, large differences in the dc resistivity and Hall coefficient are found. While around room temperature dc transport properties are dominantly determined by the strength of electron correlations, upon reducing the temperature dc transport happens by hopping due to inherent disorder. The most disordered compound with X = Cu2(CN)3 turns out to have the lowest dc resistivity and the highest charge carrier density, i.e. in the phase diagram it is located closest to the metal-insulator transition. The least disordered compound with X = B(CN)4 shows the highest resistivity and the lowest carrier density, i.e. lies furthest from the metal-insulator transition. We explain such counter-intuitive behavior within the theory of Mott-Anderson localization as a consequence of disorder-induced localized states within the correlation gap.