Electrodynamics of a Coulomb Glass in<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>n</mml:mi></mml:math>-Type Silicon

Helgren, E.; Armitage, N. P.; Grüner, G.

doi:10.1103/physrevlett.89.246601

Cited by 29 publications

(48 citation statements)

References 14 publications

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“…In a recent result, Lee et al 3 claim from their measurements on Si:B that the crossover energy scale is determined by the Coulomb gap width, ∆, as opposed to the theoretically predicted Coulomb interaction energy, U . Arguments based on the concentration dependence of these two parameters obtained from measurements over a broad range of dopant concentrations in another canonical electron glass system, Si:P, have recently been published by us casting doubt on this interpretation 4 . This highlights the usefulness and importance of investigating a wide range of majority dopant concentrations to fully understand these disordered insulating systems.…”

Section: Introductionmentioning

confidence: 99%

“…The primary goals of this work then are to present new data and to draw on results of previous work on other electron glass systems [4][5][6] to look at the insulating side of the MIT using AC conductivity data and a broad range of dopant concentrations in order to come up with a phenomenologically supported phase diagram outlining the general classification scheme for the electrodynamic response of electron glasses. DC conductivity data are presented as well and a side by side comparison of the AC and DC data provides for unique insight.…”

Section: Introductionmentioning

confidence: 99%

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Frequency-dependent conductivity of electron glasses

2004

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Results of DC and frequency dependent conductivity in the quantum limit, i.e.hω > kBT , for a broad range of dopant concentrations in nominally uncompensated, crystalline phosphorous doped silicon and amorphous niobium-silicon alloys are reported. These materials fall under the general category of disordered insulating systems, which are referred to as electron glasses. Using microwave resonant cavities and quasi-optical millimeter wave spectroscopy we are able to study the frequency dependent response on the insulating side of the metal-insulator transition. We identify a quantum critical regime, a Fermi glass regime and a Coulomb glass regime. Our phenomenological results lead to a phase diagram description, or taxonomy, of the electrodynamic response of electron glass systems.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Frequency-dependent conductivity of electron glasses

2004

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“…In order to adjust the simulations to the experimental conditions [1] we have chosen the following values of the material parameters. The concentration is 69% of the critical concentration which for Si:P is n C =3.52·10 24 m -3 .…”

Section: Resultsmentioning

confidence: 99%

“…Since we try to relate our results to the experiment, we have performed calculations for the parameters taken from [1], namely for 69% Si:P as it was mentioned above. We assumed the localization length value for this type of material to be in the interval between 0.27 and 0.36.…”

Section: Figmentioning

confidence: 99%

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Simulation of the phononless hopping in a Coulomb glass

Matulewski

Baranovskiǐ

Thomas

2006

Phys. Status Solidi (c)

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The phononless hopping conductivity of a disordered system with localized states is studied in a broad range of frequencies by straightforward computer simulations taking into account Coulomb interactions. At sufficiently low temperatures, the conductivity is determined by the zero-phonon absorption of the photon by pairs of states. The laser frequency dependence of the conductivity is examined and compared with the analytical model of Efros and Shklovskii and with recent experimental data obtained on Si:P. The range of parameters is determined, for which the conductivity dependence on photon energy best reproduces the experimental results. IntroductionRecently Helgren et al. [1] and Lee et al. [2,3] studied the frequency-dependent conductivity of Si:P at low temperature. The results were interpreted as indication for phononless hopping in the electron glass regime. (The properties of the electron glass were reviewed, for instance, in Ref. [4].) The experimental data show a transition from linear to a quadratic dependence of the conductivity with increasing photon energy (laser frequency), which is interpreted by the authors as a transition from Coulomb glass behavior determined by the long range Coulomb interactions, to Fermi glass behavior, in which these interactions are less important. This crossover was predicted already in the early 80's by Efros and Shklovskii (ES) [5,6]. For photon energies larger than the mean Coulomb interaction energy of the pairs, the ES theory reproduces the quadric Mott-like frequency dependence of the conductivity [7]. The crossover visible in Helgren's experiment is even stronger than predicted by ES theory. Also other experiments performed recently (for references see [2]) show that the ES theory though being qualitatively correct needs some quantitative improvements. The aim of this paper is to check if it is possible to reproduce the results of the above-mentioned experiments in computer simulations of the Coulomb glass system, which does not suffer from approximations necessary in the analytical description.

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2018

Impedance Spectroscopy

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Electrodynamics of a Coulomb Glass inn-Type Silicon

Cited by 29 publications

References 14 publications

Frequency-dependent conductivity of electron glasses

Frequency-dependent conductivity of electron glasses

Simulation of the phononless hopping in a Coulomb glass

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