Electrodynamics of the nodal metal state in weakly doped high-<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msub><mml:mi>T</mml:mi><mml:mi>c</mml:mi></mml:msub></mml:math>cuprates

Lee, Y. S.; Segawa, Kouji; Li, Z. Q.; Padilla, Willie J.; Dumm, M.; Dordevic, S. V.; Homes, C. C.; Ando, Yoichi; Basov, D. N.

doi:10.1103/physrevb.72.054529

Cited by 136 publications

(199 citation statements)

References 92 publications

(112 reference statements)

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“…While we have advocated the former scenario based on a calculation of the conductivity which reveals that the pseudogap is an insulating gap, 32 a result consistent with experiment 33,34 ultimately, both scenarios are possible, in principle. 35,36 The former corresponds to an insulator ͑or nodal metal͒ whereas the latter describes a metal. The recent angle-resolved photoemission experiments 26 seem to indicate that the only coexistence of quasiparticles and zeros occurs at a single point indicating that a Fermi surface is possible only for some doping level exceeding x c as depicted in the upper panels in Fig.…”

Section: Discussionmentioning

confidence: 99%

Theory of the Luttinger surface in doped Mott insulators

2007

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We prove that the Mott insulating state is characterized by a divergence of the electron self-energy at well-defined values of momenta in the first Brillouin zone. When particle-hole symmetry is present, the divergence obtains at the momenta of the Fermi surface for the corresponding noninteracting system. Such a divergence gives rise to a surface of zeros ͑the Luttinger surface͒ of the single-particle Green function and offers a single unifying principle of Mottness from which pseudogap phenomena, spectral weight transfer, and broad spectral features emerge in doped Mott insulators. We also show that only when particle-hole symmetry is present does the volume of the zero surface equal the particle density. We identify that the general breakdown of Luttinger's theorem in a Mott insulator arises from the breakdown of a perturbative expansion for the self-energy in the single-particle Green function around the noninteracting limit. A modified version of Luttinger's theorem is derived for special cases.

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Section: Discussionmentioning

confidence: 99%

Theory of the Luttinger surface in doped Mott insulators

2007

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“…Starting with new data for a sample of the archetypal electron-doped cuprate Nd 2−x Ce x CuO 4+δ (NCCO) that exhibits robust AF order (x = 0.10; superconductivity in NCCO appears for x ≈ 0.13 [4]), we follow the evolution of these three contributions as a function of temperature and doping for a large number of compounds: electron-doped NCCO [26,[31][32][33][34], La 2−x Y x CuO 4+δ (LYCO) [35], Pr 2−x Ce x CuO 4+δ (PCCO) [36][37][38][39], Pr 1.3−x La 0.7 Ce x CuO 4+δ (PLCCO) [28], and La 2−x Ce x CuO 4+δ (LCCO) [40], and hole-doped La 2−x Sr x CuO 4 (LSCO) [6,24], YBCO [7,24,41] and Bi 2 Sr 2−x La x Cu 2 O 8+δ (La-Bi2201) [27,29]. Representative resistivity data are shown in Fig.…”

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confidence: 99%

Hidden Fermi-liquid Charge Transport in the Antiferromagnetic Phase of the Electron-Doped Cuprate Superconductors

Tabiś

et al. 2016

Phys. Rev. Lett.

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Systematic analysis of the planar resistivity, Hall effect and cotangent of the Hall angle for the electron-doped cuprates reveals underlying Fermi-liquid behavior even deep in the antiferromagnetic part of the phase diagram. The transport scattering rate exhibits a quadratic temperature dependence, and is nearly independent of doping, compound and carrier type (electrons vs. holes), and hence universal. Our analysis moreover indicates that the material-specific resistivity upturn at low temperatures and low doping has the same origin in both electron-and hole-doped cuprates.The cuprates feature a complex phase diagram that is asymmetric upon electron-versus hole-doping [1] and plagued by compound-specific features associated with different types of disorder and crystal structures [2], often rendering it difficult to discern universal from nonuniversal properties. What is known for certain is that the parent compounds are antiferromagnetic (AF) insulators, that AF correlations are more robust against doping with electrons than with holes [3,4], and that pseudogap (PG) phenomena, seemingly unusual charge transport behavior, and d-wave superconductivity appear upon doping the quintessential CuO 2 planes [1]. The nature of the metallic state that emerges upon doping the insulating parent compounds has remained a central open question. Moreover, below a compound specific doping level, the low-temperature resistivity for both types of cuprates develops a logarithmic upturn that appears to be related to disorder, yet whose microscopic origin has remained unknown [1,[5][6][7]. In contrast, at high dopant concentrations, the cuprates are good metals with welldefined Fermi surfaces and clear evidence for Fermi-liquid (FL) behavior [8][9][10][11][12][13][14].In a new development, the hole-doped cuprates were found to exhibit FL properties in an extended temperature range below the characteristic temperature T * * (T * * < T * ; T * is the PG temperature): (i) the resistivity per CuO 2 sheet exhibits a universal, quadratic temperature dependence, and is inversely proportional to the doped carrier density p, ρ ∝ T 2 /p [15]; (ii) Kohler's rule for the magnetoresistvity, the characteristic of a conventional metal with a single relaxation rate, is obeyed, with a Fermi-liquid scattering rate, 1/τ ∝ T 2 [16]; (iii) the optical scattering rate exhibits the quadratic frequency dependence and the temperature-frequency scaling expected for a Fermi liquid [17]. In this part of the phase diagram, the Hall coefficient is known to be approximately independent of temperature and to take on a value that corresponds to p, R H ∝ 1/p [18]. In order to explore the possible connection among the different regions of the phase diagram, an important quantity to consider is the cotangent of the Hall angle, cot(θ H ) = ρ/(HR H ). For simple metals, this quantity is proportional to the transport scattering rate, cot(θ H ) ∝ m * /τ (H the magnetic field, and m * the effective mass). It has long been known that cot(θ H ) ∝ T 2 in the "strange-metal" ...

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“…(1) is an average of the true effective mass in the BR picture. For inhomogeneous superconductors, the gradual increase of conductivity with doping [2] is that the local Mott insulators in (Fig. 1(a) right) continuously change into metal with hole doping; σ ∝ (m * /m) 2 with doping density, ρ, dependence in Eq.…”

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confidence: 99%

“…The structural phase transition occurs between MCM and Rutile metal phases. Devices using the MIT are named MoBRiK.It has been generally accepted that conductivity,σ, and T c for inhomogeneous high-T c superconductors [1] as strongly correlated systems gradually increase with doped hole density in a Mott insulator from under-doping to critical doping [2], although a first-order transition near the Mott insulator had been theoretically suggested [3]. These phenomena seemed to be explained by the Mott-Hubbard (MH) continuous metal-insulator transition (MIT) theory.…”

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Hole-driven MIT theory, Mott transition in VO2, MoBRiK device

Kim

Lee

et al. 2007

Physica C: Superconductivity

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For inhomogeneous high-Tc superconductors, hole-driven metal-insulator transition (MIT) theory explains that the gradual increase of conductivity with increasing hole doping is due to inhomogeneity with the local Mott system undergoing the first-order MIT and the local non-Mott system. For VO2, a monoclinic and correlated metal (MCM) phase showing the linear characteristic as evidence of the Mott MIT is newly observed by applying electric field and temperature. The structural phase transition occurs between MCM and Rutile metal phases. Devices using the MIT are named MoBRiK.It has been generally accepted that conductivity,σ, and T c for inhomogeneous high-T c superconductors [1] as strongly correlated systems gradually increase with doped hole density in a Mott insulator from under-doping to critical doping [2], although a first-order transition near the Mott insulator had been theoretically suggested [3]. These phenomena seemed to be explained by the Mott-Hubbard (MH) continuous metal-insulator transition (MIT) theory. However, since the MH theory was established for homogeneous system, the theory does not explain the phenomena in inhomogeneous system. The first-order Mott MIT without the structural phase transition (SPT) has not clearly been proved. This paper briefly describes important ideas and physical meanings of the hole-driven MIT theory (extended Brinkman-Rice (BR) picture [4]) named by a reviewer in ref. 7 and explains the above phenomena. An experimental observation is also presented to clarify the Mott MIT.Metal has the electronic structure of one electron per atom in real space, i.e. half filling, which indicates that δq= (q i -q j )=0 where q i and q j are charge quantities at i and j nearest neighbor sites, respectively [4]; there is no charge density wave. The BR picture explains physical properties of a strongly correlated metal, which was developed when n = l for a homogeneous system with one electron per atom, where n is the number of electrons in the Mott system with the electronic structure of metal ( Fig. 1(a) left) and l is the number of lattices in the measurement region [3]. The Mott insulator becomes metal via MIT.When n

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Electrodynamics of the nodal metal state in weakly doped high-Tccuprates

Cited by 136 publications

References 92 publications

Theory of the Luttinger surface in doped Mott insulators

Theory of the Luttinger surface in doped Mott insulators

Hidden Fermi-liquid Charge Transport in the Antiferromagnetic Phase of the Electron-Doped Cuprate Superconductors

Hole-driven MIT theory, Mott transition in VO2, MoBRiK device

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