Electroforming and Resistive Switching in Aluminum Oxide Thin Films

Gerasimova, M. I.; Андреева, Н. В.; Bobkov, A. A.; Чигирев, Д. А.; Golubkov, Vladimir A.

doi:10.1109/eexpolytech.2019.8906859

Cited by 1 publication

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“…However, in the case of metal oxide‐based resistive switching memory, a relatively high voltage is required to form the nanofilament inside the resistive switching layer in order to operate the resistive switching behavior. [ 14 , 25 , 26 ] Usually, in the electroforming process, a voltage greater than the switching voltage of the resistive switching memory is required. A large electroforming voltage has naturally emerged as a major issue in resistive switching memory and many studies are being conducted to improve the high electroforming voltage issue.…”

Section: Introductionmentioning

confidence: 99%

Transparent, Flexible, and Low‐Operating‐Voltage Resistive Switching Memory Based on Al₂O₃/IZO Multilayer

et al. 2022

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In this study, a different number of indium zinc oxide (IZO) interlayers are fabricated into Al 2 O 3 ‐based transparent resistive switching memory on a transparent indium tin oxide (ITO)/glass substrate at room temperature. Al 2 O 3 /IZO multilayer transparent memory has a transmittance of at least 65% in the wavelength range of 400–900 nm. In addition, the Al 2 O 3 /IZO multilayer transparent memory can achieve an electroforming voltage that is 35.7% lower than that of ITO/pure‐Al 2 O 3 /IZO transparent memory. The fabricated Al 2 O 3 /IZO multilayer transparent memory exhibits typical bipolar resistive switching behavior, regardless of the number of IZO interlayers. Also, the fabricated Al 2 O 3 /IZO multilayer transparent memory has a low operating voltage within ±1.5 V. In addition, a flexible Al 2 O 3 /IZO multilayer transparent memory is fabricated using the same process on ITO‐coated polyethylene terephthalate. The fabricated flexible transparent memory also maintains the resistive switching characteristics during the bending state.

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Section: Introductionmentioning

confidence: 99%

Transparent, Flexible, and Low‐Operating‐Voltage Resistive Switching Memory Based on Al₂O₃/IZO Multilayer

et al. 2022

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Electroforming and Resistive Switching in Aluminum Oxide Thin Films

Cited by 1 publication

References 5 publications

Transparent, Flexible, and Low‐Operating‐Voltage Resistive Switching Memory Based on Al₂O₃/IZO Multilayer

Transparent, Flexible, and Low‐Operating‐Voltage Resistive Switching Memory Based on Al₂O₃/IZO Multilayer

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Electroforming and Resistive Switching in Aluminum Oxide Thin Films

Cited by 1 publication

References 5 publications

Transparent, Flexible, and Low‐Operating‐Voltage Resistive Switching Memory Based on Al2O3/IZO Multilayer

Transparent, Flexible, and Low‐Operating‐Voltage Resistive Switching Memory Based on Al2O3/IZO Multilayer

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Transparent, Flexible, and Low‐Operating‐Voltage Resistive Switching Memory Based on Al₂O₃/IZO Multilayer

Transparent, Flexible, and Low‐Operating‐Voltage Resistive Switching Memory Based on Al₂O₃/IZO Multilayer