Surface grafting of aryl radicals generated by electrochemical reduction of aryldiazonium salts has been extensively studied on various surfaces. However, there exits two unclear aspects; the first one is the generality of the blocking ability of simple functional groups towards multi-layer growth, and the second one is the electronic impact of substituent groups of aryl radicals on grafting efficiency. To address these aspects, we have studied the electrochemical functionalization of graphite using aryldiazonium salts having electron-donating or -withdrawing groups at the 3,4,5-positions. AFM investigation of the functionalized surfaces revealed the formation of monolayers for all aryldiazonium salts, and thus nitro, carboxy, ester, methyl and methoxy groups at the 3,4,5-positions of the benzene ring suppress polyaryl growth. The degree of grafting estimated by STM imaging and Raman spectroscopy of the functionalized surfaces depends on the electronic state of the aryl radicals, in which the radicals with electron-donating groups show a high degree of functionalization, while those with electron-withdrawing groups exhibit a low degree of functionalization. We discuss several possibilities that affect grafting density. Though there are several factors, we hypothesize that one factor to explain the observed reactivity trend is the electronic property of the aryl radicals, namely the relative position of the singly-occupied molecular orbital (SOMO) energy levels of the aryl radicals with respect to the graphite Fermi energy level.
ASSOCIATED CONTENT Supporting InformationExperimental details, synthesis of 5a, washing procedure of functionalized HOPG by 6a, model of the bilayer formed by 6a, details of formation and dediazoniation for aryldiazonium salts, and results of post functionalization. This material is available free of charge via the Internet at http://pubs.acs.org.