Electroless copper on refractory and noble metal substrates with an ultra-thin plasma-assisted atomic layer deposited palladium layer

Youngsoon, Kim; Kim, Hyung-Il; Cho, Joong-Hee; Seo, Hyung‐Kee; Dar, Mushtaq Ahmad; Shin, Hyung‐Shik; Eyck, Gregory A. Ten; Lu, Toh‐Ming; Senkevich, Jay J.

doi:10.1016/j.electacta.2005.07.018

Cited by 15 publications

(4 citation statements)

References 18 publications

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“…However, such processes can be only carried out on pre-treated surfaces either with electrically conductive layers (for ECD) or sensitized with catalysts such as tin, palladium, platinum, or even copper for EL. 5 Here we describe a new and efficient silica surface metallization process involving an organometallic copper precursor in a liquid type implementation. The deposition can be performed either from a copper colloidal dispersion generated from an organic solution of mesitylcopper or directly (organometallic chemical liquid deposition (OMCLD)), as a continuous metallic film, depending on the experimental conditions.…”

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confidence: 99%

Copper nanoparticles and organometallic chemical liquid deposition (OMCLD) for substrate metallization

et al. 2008

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mentioning

confidence: 99%

Copper nanoparticles and organometallic chemical liquid deposition (OMCLD) for substrate metallization

et al. 2008

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“…Desirable characteristics for ideal diffusion barrier materials have been proposed [80,81], including (1) excellent adhesion to Cu metal and dielectric layer; (2) immiscibility with Cu and an ability to prevent Cu diffusion at high temperatures; (3) good conductivity for direct ED of Cu; and (4) simplicity of uniform deposition of ultra-thin film on dielectric layer. In order to find a suitable replacement of traditional barrier materials, attention has been paid to PGM-based materials (e.g., Ru [82][83][84][85], iridium Ir [86][87][88][89], palladium Pd [90] and their composites with other materials [91][92][93][94][95][96][97]), 2D materials (e.g., graphene [98,99], hexagonal boron nitride h-BN [100], and molybdenum disulfide MoS 2 [101,102]), SAMs [103][104][105][106][107] and HEAs [108][109][110][111]. The comparison of properties between new barrier materials and traditional Ta/TaN is listed in Table 1.…”

Section: Cu Interconnects and Diffusion Barrier Materialsmentioning

confidence: 99%

Recent Advances in Barrier Layer of Cu Interconnects

Tian

Teng

et al. 2020

Materials

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The barrier layer in Cu technology is essential to prevent Cu from diffusing into the dielectric layer at high temperatures; therefore, it must have a high stability and good adhesion to both Cu and the dielectric layer. In the past three decades, tantalum/tantalum nitride (Ta/TaN) has been widely used as an inter-layer to separate the dielectric layer and the Cu. However, to fulfill the demand for continuous down-scaling of the Cu technology node, traditional materials and technical processes are being challenged. Direct electrochemical deposition of Cu on top of Ta/TaN is not realistic, due to its high resistivity. Therefore, pre-deposition of a Cu seed layer by physical vapor deposition (PVD) or chemical vapor deposition (CVD) is necessary, but the non-uniformity of the Cu seed layer has a devastating effect on the defect-free fill of modern sub-20 or even sub-10 nm Cu technology nodes. New Cu diffusion barrier materials having ultra-thin size, high resistivity and stability are needed for the successful super-fill of trenches at the nanometer scale. In this review, we briefly summarize recent advances in the development of Cu diffusion-proof materials, including metals, metal alloys, self-assembled molecular layers (SAMs), two-dimensional (2D) materials and high-entropy alloys (HEAs). Also, challenges are highlighted and future research directions are suggested.

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“…1) Low resistivity and strong Cu/barrier adhesion ability are two important factors in choosing a material for a good Cu glue layer. Nowadays, there are a variety of novel metal materials with low resistivities, including Ru, 1,[7][8][9][10][11] Co, 12) Pd, 13) Rh, 14) Mo, 15) Os, 1) and Ir, 16,17) which have been identified as possible candidate materials for Cu glue layers. Kim and coworkers performed a systematic evaluation of the Cu adhesion property on different glue layers, such as Ta, Ru, Mo, and Os, and their experimental results show that a glue layer material with a low lattice misfit to Cu has a promising Cu adhesion property.…”

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confidence: 99%

Density Functional Theory Study of Cu Adhesion on Rh, Ir, Pd, Ta, Mo, Ru, Co, and Os Surfaces

Chen

Jiang

et al. 2011

Jpn. J. Appl. Phys.

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In this work, first-principles calculation based on the density functional theory was applied to study Cu adhesion on the surfaces of Rh(111), Ir(111), Pd(111), Ta(110), Mo(110), Co(0001), Os(0001), and Ru(0001), on which the adsorption energy, electron density difference, and geometrical structures of Cu were investigated. The analysis of the calculated and experimental results shows that the atomic chemical interaction, surface lattice mismatch, and crystal lattice type have marked effects on Cu adhesion on glue layers. Cu atoms on all the metal surfaces studied in this work are more likely to form the fcc structure with a quasi-(111) orientation. The coupling effect of the large surface lattice mismatch and the lattice type difference between Cu and the metal surface can greatly reduce Cu adhesion ability. Among all the studied metals, Ir and Os showed comparable adhesion ability to Ru and can be considered as promising Cu glue layers for Cu interconnects.

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Electroless copper on refractory and noble metal substrates with an ultra-thin plasma-assisted atomic layer deposited palladium layer

Cited by 15 publications

References 18 publications

Copper nanoparticles and organometallic chemical liquid deposition (OMCLD) for substrate metallization

Copper nanoparticles and organometallic chemical liquid deposition (OMCLD) for substrate metallization

Recent Advances in Barrier Layer of Cu Interconnects

Density Functional Theory Study of Cu Adhesion on Rh, Ir, Pd, Ta, Mo, Ru, Co, and Os Surfaces

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