Electroless processes for micro- and nanoelectronics

Shacham‐Diamand, Yosi; Inberg, Alexandra; Sverdlov, Yelena; Bogush, V.; Croitoru, N.; Moscovich, H; Freeman, Amihay

doi:10.1016/s0013-4686(03)00364-5

Cited by 82 publications

(52 citation statements)

References 30 publications

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“…1 A process to deposit a uniform and continuous thin film ( < 2 nm) of copper in high aspect ratio structures is desirable in order to meet the demands of current trends in integrated circuit technology. Deposition techniques including physical vapour deposition (PVD), 2 electrodeposition, 3 chemical vapour deposition (CVD), 4 and atomic layer 1-17 | 1 deposition (ALD) 5 have been applied with the aim of obtaining such a thin film. However, it is extremely difficult to deposit thin films of Cu at this thickness and instead islands of Cu tend to be more favourable.…”

Section: Introductionmentioning

confidence: 99%

Reduction mechanisms of the CuO(111) surface through surface oxygen vacancy formation and hydrogen adsorption

Maimaiti

Nolan

Elliott

2014

Phys. Chem. Chem. Phys.

172

163

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We studied the reduction of CuO(111) surface using density functional theory (DFT) with the generalized gradient approximation corrected for on-site Coulomb interactions (GGA + U) and screened hybrid DFT (HSE06 functional). The surface reduction process by oxygen vacancy formation and H2 adsorption on the CuO(111) surface is investigated as two different reduction mechanisms. It is found that both GGA + U and HSE06 predict the same trend in the relative stability of oxygen vacancies. We found that loss of the subsurface oxygen is initially thermodynamically favourable. As the oxygen vacancy concentration increases, mixture of subsurface and surface vacancies is energetically preferred over full reduction of the surface or subsurface monolayer. The reduction of Cu2+ to Cu+ is found to be more favourable than that of Cu+ to Cu0 in the most stable vacancy structures at all concentrations. Consistent with the oxygen vacancy calculations, H2 adsorption occurs initially on under-coordinated surface oxygen. Water molecules are formed upon the adsorption of H2 and this gives a mechanism for H2 reduction of CuO to Cu. Ab initio atomistic thermodynamics shows that reducing CuO to metallic Cu at the surface is more energetically difficult than in the bulk so that the surface oxide protects the bulk from reduction. Using H2 as the reducing agent, it is found that the CuO surface is reduced to Cu2O at approximately 360 K and that complete reduction from Cu2O to metallic Cu occurs at 780 K

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Section: Introductionmentioning

confidence: 99%

Reduction mechanisms of the CuO(111) surface through surface oxygen vacancy formation and hydrogen adsorption

Maimaiti

Nolan

Elliott

2014

Phys. Chem. Chem. Phys.

172

163

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“…The reaction of Cu(dmap) 2 and Et 2 Zn was previously used to synthesize Cu/Zn alloy nanocolloids using thermolysis. 22 Vidjayacoumar et al investigated ALD reactions of eight different copper (II) complexes separately with AlMe 3 , BEt 3 and Et 2 Zn in order to identify the most promising combination of the copper precursor and co-reagent. 20,23 The reductive properties of various metallocenes along with different copper precursors were investigated with density functional theory (DFT) and solution phase chemistry to evaluate the use of metallocene compounds as reducing agents for Cu ALD.…”

Section: Introductionmentioning

confidence: 99%

Kinetics and Coverage Dependent Reaction Mechanisms of the Copper Atomic Layer Deposition from Copper Dimethylamino-2-propoxide and Diethylzinc

Maimaiti

Elliott

2016

Chem. Mater.

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Original citationMaimaiti, Yasheng; Elliott, Simon D. (2016) Just Accepted "Just Accepted" manuscripts have been peer-reviewed and accepted for publication. They are posted online prior to technical editing, formatting for publication and author proofing. The American Chemical Society provides "Just Accepted" as a free service to the research community to expedite the dissemination of scientific material as soon as possible after acceptance. "Just Accepted" manuscripts appear in full in PDF format accompanied by an HTML abstract. "Just Accepted" manuscripts have been fully peer reviewed, but should not be considered the official version of record. They are accessible to all readers and citable by the Digital Object Identifier (DOI®). "Just Accepted" is an optional service offered to authors. Therefore, the "Just Accepted" Web site may not include all articles that will be published in the journal. After a manuscript is technically edited and formatted, it will be removed from the "Just Accepted" Web site and published as an ASAP article. Note that technical editing may introduce minor changes to the manuscript text and/or graphics which could affect content, and all legal disclaimers and ethical guidelines that apply to the journal pertain. ACS cannot be held responsible for errors or consequences arising from the use of information contained in these "Just Accepted" manuscripts. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 2 mechanism. During both reaction mechanisms, ligand diffusion and reordering are generally endothermic processes, which may result in residual ligands blocking the surface sites at the end of the Et 2 Zn pulse, and in residual Zn being reduced and incorporated as an impurity. We also find that the nearby ligands play a cooperative role in lowering the activation energy for formation and desorption of by-products, which explains the advantage of using organometallic precursors and reducing agents in Cu ALD. The ALD growth rate estimated for the mechanism is consistent with the experimental value of 0.2 Å/cycle. The proposed reaction mechanisms provide insight into ALD processes for copper and other transition metals.

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“…(Matsubara et al, 2002). Today, the deposition process of electroless coating and thin films plays an important role in microelectronics (Shacham-Diamond et al, 2003). The outstanding characteristics of electroless nickel (EN) coatings include their ability to be applied to a variety of substrate materials such as metals (conductive) and non-metallic (non-conductive) materials and their ability to the plate uniformly on geometrically intricate parts since no external current is applied to the component (Parker 1972;Khoperia et al, 1997;Gemmler et al, 1990); therefore, this process is called electroless.…”

Section: Introductionmentioning

confidence: 99%

EFFECT OF pH ON ELECTROLESS Ni-P COATING OF CONDUCTIVE AND NON-CONDUCTIVE MATERIALS

Moniruzzaman

Roy²

2011

Int. J. Automot. Mech. Eng.

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Electroless nickel-phosphorus (Ni-P) coating of carbon steel as well as a polypropylene substrate was conducted using sodium hypophosphite as a reducing agent in alkaline media. The influence of pH on coating appearances and the properties of the coatings for both steel and the polypropylene substrate were studied. A nickel-phosphorus coating of good appearance was obtained in the pH range between 5.5 and 12.5 on the carbon steel substrate and between 8.5 and 12 on the polypropylene substrate. The percentage of Ni content in the coating increased with increasing pH of the bath solution. A smooth, uniform microstructure was found in the coating deposited in relatively lower pH solutions compared to higher pH baths. The microhardness of the Ni-P coating decreased with an increasing percentage Ni content in the deposit.

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Electroless processes for micro- and nanoelectronics

Cited by 82 publications

References 30 publications

Reduction mechanisms of the CuO(111) surface through surface oxygen vacancy formation and hydrogen adsorption

Reduction mechanisms of the CuO(111) surface through surface oxygen vacancy formation and hydrogen adsorption

Kinetics and Coverage Dependent Reaction Mechanisms of the Copper Atomic Layer Deposition from Copper Dimethylamino-2-propoxide and Diethylzinc

EFFECT OF pH ON ELECTROLESS Ni-P COATING OF CONDUCTIVE AND NON-CONDUCTIVE MATERIALS

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