Electroless Synthesis of Metallic Nanostructures for Biomedical Technologies

Cathodic Electrodeposition of Ni−Mo on Semiconducting NiFe2O4 for Photoelectrochemical Hydrogen Evolution in Alkaline Media

“…Methods such as physical vapor deposition (PVD) or chemical vapor deposition (CVD) are often utilized to achieve optimized interfaces. [8,10,11] This is as o-called electroless deposition method, which does not require an externalb ias to drivee lectrochemi-cal reactions. An all-wet electrochemical process would be more desirable.…”

“…[8] An example of an electrochemical method fort he formationo fm etals on semiconductors is galvanic displacement. [8,10,11] This is as o-called electroless deposition method, which does not require an externalb ias to drivee lectrochemi-cal reactions. During galvanic displacement,t he surface of the semiconductor in contact with the metal-cation solution is oxidized while the metal layer is simultaneously formed by reduction of the cations.…”

Electrochemical Processing and Thermal Properties of Functional Core/Multi-Shell ZnAl/Ni/NiP Microparticles

“…Electroless deposition is categorized into two major processes: (1) Autocatalytic deposition, in which a reducing agent present in the electrolyte solution is being utilized to supply electrons to facilitate the reduction reaction of metal ions to the substrate surface. Autocatalytic deposition can be applied to non-conductive materials by applying surface activation pretreatment before the deposition step [45,46,48,49], and (2) galvanic displacement deposition, also known as cementation [50][51][52][53], in which the displacement reaction does not require the presence of any reducing agent in the electrolyte solution to facilitate deposition. This process occurs spontaneously when a less noble metal is immersed in an electrolyte solution containing more noble metal ions.…”

“…The galvanic displacement process takes place until the substrate is fully covered with the depositing metal, thus terminating the oxidation-reduction reaction. Consequently, the final coating thickness is limited [45,48,52,54,55].…”