Electroluminescence and current–voltage measurements of single-(In,Ga)N/GaN-nanowire light-emitting diodes in a nanowire ensemble

Treeck, David van; Ledig, Johannes; Scholz, Gregor; Lähnemann, Jonas; Musolino, Mattia; Tahraoui, A.; Brandt, O.; Waag, A.; Riechert, H.; Geelhaar, Lutz

doi:10.3762/bjnano.10.117

Cited by 8 publications

(4 citation statements)

References 26 publications

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“…This behavior, which is not predicted by the one-diode model, has been observed previously in NW light emitting diodes [40,41], and can be explained in terms of variable range hopping of electrons between trap states [40][41][42][43].…”

Section: I−v Characteristicscontrasting

confidence: 48%

Processing and characterization of large area InP nanowire photovoltaic devices

et al. 2023

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III−V nanowire (NW) photovoltaic devices promise high efficiencies at reduced materials usage. However, research has so far focused on small devices, mostly ≤ 1 mm². In this study, the upscaling potential of axial junction InP NW photovoltaic devices is investigated. Device processing was carried out on a full 2” wafer, with device sizes up to 1 cm², which is a significant increase from the mm-scale III−V NW photovoltaic devices published previously. The short-circuit current density of the largest 1 cm² devices, in which 460 million NWs are contacted in parallel, is on par with smaller devices. This enables a record power generation of 6.0 mW under AM1.5G llumination, more than one order of magnitude higher than previous III−V NW photovoltaic devices. On the other hand, the fill factor of the larger devices is lower in comparison with smaller devices, which affects the device efficiency. By use of electroluminescence mapping, resistive losses in the indium tin oxide (ITO) front contact are found to limit the fill factor of the large devices. We use combined light-beam induced current (LBIC) and photoluminescence (PL) mapping as a powerful characterization tool for NW photovoltaic devices. From the LBIC and PL maps, local defects can be identified on the fully processed devices.

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Section: I−v Characteristicscontrasting

confidence: 48%

Processing and characterization of large area InP nanowire photovoltaic devices

et al. 2023

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“…Note that this estimate does not take into account the differences in strain state between a planar (In,Ga)N layer and the (In,Ga)N shells. In general, the emission wavelength fluctuations between NWs observed by CL (see section 3.5) are much smaller than those observed for MBE-grown axial heterostructures on selfassembled NW ensembles on Si, where the emission wavelength varies from blue to red among individual NWs [16,[44][45][46][47]. The absence of any luminescence of the GaN core in the PL spectra indicates that the electron-hole pairs excited in the core can efficiently diffuse to the (In,Ga)N shell and the top segment.…”

Section: Towards High In Content (Inga)n Shellsmentioning

confidence: 79%

Growth mechanisms in molecular beam epitaxy for GaN-(In,Ga)N core–shell nanowires emitting in the green spectral range

van Treeck,

Lähnemann,

Brandt

et al. 2023

Nanotechnology

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Using molecular beam epitaxy, we demonstrate the growth of (In,Ga)N shells emitting in the green spectral range around very thin (35 nm diameter) GaN core nanowires. These GaN nanowires are obtained by self-assembled growth on TiN. We present a qualitative shell growth model accounting for both the three-dimensional nature of the nanostructures as well as the directionality of the atomic fluxes. This model allows us, on the one hand, to optimise the conditions for high and homogeneous In incorporation and, on the other hand, to explain the influence of changes in the growth conditions on the sample morphology and In content. Specifically, the impact of the V/III and In/Ga flux ratios, the rotation speed and the rotation direction are investigated. Notably, with In acting as surfactant, the ternary (In,Ga)N shells are much more homogeneous in thickness along the NW length than their binary GaN counterparts.

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“…Recent years have seen immense advances in electroluminescent (EL) InGaN-based LEDs grown on a single chip for use in lighting and display technologies. 4 To further reveal the EL characteristics of single InGaN/GaN LEDs grown on a Si substrate, van Treeck et al 5 recently investigated the electroluminescence and current–voltage characteristics of spontaneously Si-grown InGaN/GaN nanowires using the nanoprobing technique. However, due to the high-density distribution of the spontaneously grown NWs, the experimental results obtained in this work may reflect the overall properties of multiple NWs.…”

Section: Introductionmentioning

confidence: 99%