Electroluminescence and negative differential resistance studies of TPD:PBD:Alq3 blend organic-light-emitting diodes

Sarjidan, Mohd Arif Mohd; Basri, S. H.; Za’aba, N.K.; Zaini, M. S.; Majid, W.H. Abd.

doi:10.1007/s12034-014-0807-6

Cited by 13 publications

(10 citation statements)

References 37 publications

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“…Similar behavior was observed in devices based on organic layer doped by metal nano-clusters or fluorescent dyes [21][22][23][24][25]. It was proposed that charge accumulation within Alq3 layer would play a key role in the bistable trend and NDR properties [21].…”

Section: Negative Differential Resistancesupporting

confidence: 62%

Application of [Pt(II)(Tetra-Tert-Butylsalophen)] Complex within Organic Devices: Deep Red Emission, Bistable Light-Emitting Diodes and Operational Stability

et al. 2018

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This paper focuses on the Negative Differential Resistance (NDR) we observed on organic light-emitting diodes (OLEDs) using [Pt(II)(tetra-tert-butylSalophen)] as host, since this Pt(II) complex displays a deep-red emission (λ max = 660 nm). Electrical characterizations of monolayer devices have shown that doping Tris-(8-hydroxyquinoline)aluminum (Alq 3 ) as matrix emissive layer with this complex, leads to the modulation of the charge transport properties highlighted by Negative Differential Resistance (NDR). Upon electrical driving stresses, the conductivity of active layer can be switched between two electrical states (ON and OFF) with a figure of merit higher than 10 3 . By adding an electron-blocking layer, we demonstrated that the NDR trend is closely related to negative charge accumulation within Alq 3 leading to the modification of electronic properties in the vicinity of anode/active layer interface. The NDR phenomenon is interpreted in terms of space charge polarization (SCP) linked to charge trapping/untrapping mechanism as a consequence of the polarization/depolarization of the Pt(II) complex. Under electrical driving stresses, the performance of the devices which include the Pt(II) complex, are stabilized. A schematic model is proposed to depict the SCP responsible for NDR and decrease-resetting behaviors observed in these devices.

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Section: Negative Differential Resistancesupporting

confidence: 62%

Application of [Pt(II)(Tetra-Tert-Butylsalophen)] Complex within Organic Devices: Deep Red Emission, Bistable Light-Emitting Diodes and Operational Stability

et al. 2018

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“…NDR can be removed by using current annealing technique to enhance the device performance. In this Letter, the figure shows that the NDR phenomenon occurs at low-driving voltage [24][25][26][27][28][29]. Fig.…”

Section: Resultsmentioning

confidence: 99%

“…It is reported in [27] that NDR at low‐voltage regions is due to the generation of guest hoping sites (GHS). This can be explained considering that electrons and holes travel from GHS after their injection from cathode and anode, respectively, at low voltages.…”

Section: Resultsmentioning

confidence: 99%

Opto‐electrical properties of HAT‐CN based organic light emitting diode

Jain¹,

Sinha

Pandey

et al. 2020

Micro & Nano Letters

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HAT-CN)-based organic light emitting diode (OLED) have been simulated, fabricated, and characterised. HAT-CN has been inserted as an organic interlayer at the indium tin oxide/organic interface. It has been observed that there is a significant increase in the current density of the device. Also, the electroluminescence (EL) intensity of the OLED device is in contrast with J-V characteristics, i.e. EL intensity and current density is maximum at 22 nm Alq 3 layer thickness. There is an approximate increase of 0.13 A/cm 2 in current density with respect to the applied voltage when the Alq 3 thickness is varied from 20 to 22 nm. The maximum current density obtained is 0.4 A/cm 2. EL intensity is approximately increased by 30% at the same Alq 3 thickness. A comparison of fabricated and simulated optoelectronic devices has also been reported in this work. They have found proximity between the fabricated and simulated devices.

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“…Nowadays, organic materials are receiving great attention in the development of organic electronic devices like transistors, sensors, memories, diodes, and solar cells [1][2][3][4][5]. This is mainly because of their unique feature offering towards the realization of light weight, flexible, easily processable and cost effective devices for the real life applications [6,7].…”

Section: Introductionmentioning

confidence: 99%

A study on the spectroscopic, energy band, and optoelectronic properties of α,ω-dihexylsexithiophene/tris(8-hydroxyquinolinate) gallium blends; DH6T/Gaq3 composite system

Muhammad

Yahya

Ketuly

et al. 2016

Spectrochimica Acta Part A: Molecular and Biomolecular Spectros

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Electroluminescence and negative differential resistance studies of TPD:PBD:Alq3 blend organic-light-emitting diodes

Cited by 13 publications

References 37 publications

Application of [Pt(II)(Tetra-Tert-Butylsalophen)] Complex within Organic Devices: Deep Red Emission, Bistable Light-Emitting Diodes and Operational Stability

Application of [Pt(II)(Tetra-Tert-Butylsalophen)] Complex within Organic Devices: Deep Red Emission, Bistable Light-Emitting Diodes and Operational Stability

Opto‐electrical properties of HAT‐CN based organic light emitting diode

A study on the spectroscopic, energy band, and optoelectronic properties of α,ω-dihexylsexithiophene/tris(8-hydroxyquinolinate) gallium blends; DH6T/Gaq3 composite system

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