Electroluminescence and photoluminescence of type-II InAs/InAsSb strained-layer superlattices in the mid-infrared

Keen, James; Repiso, E.; Lu, Qi; Kesaria, Manoj; Marshall, Andrew; Krier, A.

doi:10.1016/j.infrared.2018.08.001

Cited by 12 publications

(6 citation statements)

References 22 publications

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“…show greater enhancement values (x10) compared with previous work 24,30 . The output power of the RCLED was measured to be 5.5 µW (external efficiency ≈ 0.024%) at 300 K rising to 45 µW at 77 K. We note that the electroluminescence of our RCLED lies entirely within the CO2 absorption band which coupled with the improved directionality provides a higher level of useful emission intensity compared with previous work 3,5,[13][14][15][16][17][18] .…”

Section: (D)mentioning

confidence: 58%

“…Various LED structures have been developed for CO2 monitoring at 4.2 µm [9][10][11][12] , including bulk heterostructures of InAsSbP/InAsSb 13 , AlInSb 14 , InAsSb 15 , as well as InSb/InAs quantum dots 16 , InAs/InAsSb quantum wells and superlattices 3,5,17,18 . These devices typically exhibit 300 K output powers of a few microwatts, with an emittance of ~1-14 mW/cm -2 , but with broadband emission spectra resulting in low available power at the target wavelength.…”

mentioning

confidence: 99%

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Electroluminescence enhancement in mid-infrared InAsSb resonant cavity light emitting diodes for CO2 detection

Al-Saymari

Craig

Noori

et al. 2019

Applied Physics Letters

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In this work we demonstrated a mid-infrared resonant cavity light emitting diode (RCLED) operating near 4.2 μm at room temperature, grown lattice-matched on a GaSb substrate by molecular beam epitaxy, suitable for CO2 gas detection. The device consists of a 1 -thick micro-cavity containing an InAs0.90Sb0.1 active region sandwiched between two high contrast, lattice-matched AlAs0.08Sb0.92/GaSb distributed Bragg reflector (DBR) mirrors. The electroluminescence emission spectra of the RCLED were measured over the temperature range from 20 to 300 K and compared with a reference LED without DBR mirrors. The RCLED exhibits a strong emission enhancement due to resonant cavity effects. At room temperature, the peak emission and the integrated peak emission were found to be increased by a factor of ~70 and ~11, respectively, while the total integrated emission enhancement was ~ x33. This is the highest resonant cavity enhancement ever reported for a mid-infrared LED operating at this wavelength. Furthermore, the RCLED also exhibits superior temperature stability ~0.35 nm/K and a significantly narrower (10x) spectral linewidth. High spectral brightness and temperature stable emission entirely within the fundamental absorption band are attractive characteristics for the development of next generation CO2 gas sensor instrumentation.

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Section: (D)mentioning

confidence: 58%

mentioning

confidence: 99%

Electroluminescence enhancement in mid-infrared InAsSb resonant cavity light emitting diodes for CO2 detection

Al-Saymari

Craig

Noori

et al. 2019

Applied Physics Letters

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“…In our work, the main attention is paid to photoluminescent properties of a heterostructure based on bulk InAsSb compounds. The antimony-based materials were heavily studied in the past, but mostly in a form of lowdimensional structures [11][12][13], not in a bulk form. In this case, the novelty and importance of our work lies precisely in the disclosure of fundamental processes of radiative and non-radiative recombination in narrow-gap epitaxial layers based on antimonides.…”

Section: Introductionmentioning

confidence: 99%

Photoluminescence Spectroscopy of the InAsSb-Based p-i-n Heterostructure

et al. 2022

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Photoluminescence in a double heterostructure based on a ternary InAsSb solid solution was observed in the mid-infrared range of 2.5–4 μm. A range of compositions of the InAs1-ySby ternary solid solution has been established, where the energy resonance between the band gap and the splitting-off band in the valence band of the semiconductor can be achieved. Due to the impact of nonradiative Auger recombination processes, different temperature dependence of photoluminescence intensity was found for the barrier layer and the narrow-gap active region, respectively. It was shown that efficient high-temperature photoluminescence can be achieved by suppressing the nonradiative Auger recombination (CHHS) process. Increased temperature, for which the energy gap is lower than the split-off band energy, leads to violation of the resonance condition in narrow gap antimonide compounds, which explains the observed phenomenon. This finding might influence future application of the investigated material systems in mid-infrared emitters used for, e.g., optical gas sensing.

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“…Эти недостатки определяются фундаментальными причинами -спецификой зонной структуры рассматриваемых материалов и температурной зависимостью ширины запрещенной зоны E g полупроводников, и не могут быть преодолены в структурах на оcнове " объемных" материалов. Данные проблемы, однако, могут быть частично решены в структурах со сверхрешетками (СР), где возможно как подавление оже-рекомбинации [2,3], так и получение слабой температурной зависимости " оптической" E g (см., например, [4][5][6][7]). При этом СР предоставляют возможности для создания различных структур даже большие, чем твердые растворы.…”

Section: Introductionunclassified

Исследование возможностей метода газофазной эпитаксии из металлорганических соединений для изготовления тонких слоев InAs/GaSb

Левин¹,

Пушный²,

Федоров³

et al. 2019

Журнал Технической Физики

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Capabilities of Metal Organic Chemical Vapor Deposition (MOCVD) method for fabrication of multi-layer InAs/GaSb structures with thin (1-2 nm) layers on GaSb substrates were studied. Properties of fabricated structures were studied by transmission electron microscopy and photo- and electro-luminescence. It was found that during growth, two solid solutions GaInAsSb of different compositions were formed in the active region of the structures. The system obtained is characterized by emission at the wavelength of 4.96 µm at the temperature 77 K. Our results demonstrate new capabilities of MOCVD method for bandgap engineering of semiconductor structures based on InAs/GaSb and designed for optoelectronic devices for infrared wavelength range.

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Electroluminescence and photoluminescence of type-II InAs/InAsSb strained-layer superlattices in the mid-infrared

Cited by 12 publications

References 22 publications

Electroluminescence enhancement in mid-infrared InAsSb resonant cavity light emitting diodes for CO2 detection

Electroluminescence enhancement in mid-infrared InAsSb resonant cavity light emitting diodes for CO2 detection

Photoluminescence Spectroscopy of the InAsSb-Based p-i-n Heterostructure

Исследование возможностей метода газофазной эпитаксии из металлорганических соединений для изготовления тонких слоев InAs/GaSb

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